Growth of GaN films by hot wall epitaxy

Abstract

Improved GaN growth using a quasihot wall metal-organic chemical vapor epitaxy reactor

Improvement of the structural and electrical properties of InAsSb epilayer using Sb-rich InAsSb buffer layer grown by hot wall epitaxy

“…This technique has been successfully utilized to grow high-quality epilayers of II-VI compounds [9,10] and GaN films [11]. However, there is no detailed report on the growth of high crystalline quality and homogeneous InAsSb layers using HWE.…”

Fabrication and characterization of short period AlN/GaN quantum cascade laser structures

“…Prior to the growth of the QC structure, a hightemperature (HT) GaN buffer layer was grown by a two-step growth method [19,20]. The surface of a sapphire substrate was nitrided at 950 C under flowing NH 3 (100 sccm) for 30 min above the NH 3 wall.…”

Influence of arsenic temperature on the structural and electrical characteristics of InAsSb layers grown on GaAs by hot wall epitaxy

“…On the other hand, hot wall epitaxy (HWE) is a simple technique and the epitaxial growth can be proceeded near thermodynamic equilibrium conditions. The technique has been successfully used to grow high-quality epilayers of II-VI compounds [11,12] and GaN [13]. However, there is no detailed report on the growth of InAsSb ternary layers using HWE.…”