“…This attracts extensive interests in long-wavelength (8)(9)(10)(11)(12) lm) infrared detector fabrication using InSb-based InAsSb materials [2][3][4]. Furthermore, the better stability, faster response rate and higher room-temperature electron mobility make InAs x Sb 1 À x an alternative material to Hg x Cd 1 À x Te [5][6][7]. InAs x Sb 1 À x with a full composition range (0 < x < 1) had been successfully grown by nonequilibrium process, such as molecular beam epitaxy (MBE) [2,[8][9][10] and metal organic chemical vapor deposition (MOCVD) [3,4,[11][12][13].…”