Influence of arsenic temperature on the structural and electrical characteristics of InAsSb layers grown on GaAs by hot wall epitaxy

Investigations on the effect of InSb and InAsSb step-graded buffer layers in InAs0.5Sb0.5 epilayers grown on GaAs (0 0 1)

“…As the layer thickness increases, the relaxed regions continue to grow and coalesce the islands. We have already demonstrated that the 3D island growth of the InAs x Sb 1Àx epilayer with midAs composition in the range of 0.4pxp0.6 [15]. In sample B, the surface morphology reveals the growth of both 3D islands and 2D plateau-like crystals.…”

Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD

“…So the strip pyramids are not the separate elemental antimony or indium phase. Nakamura [7,14] thought the strip pyramids imply a different incorporation behavior of the atoms to the growth surface compared with other compositional InAs x Sb 1−x (x ≤ 0.6). Surface morphology of the InAs 0.9 Sb 0.1 epilayers grown without buffer layers appears higher density of small paralleling strip pyramids (not shown here) which caused by compressive strains between epilayers and GaAs substrates.…”

Single crystalline InAsxSb1−x films with cut-off wavelength of 7–8μm grown on (100) InSb substrates by liquid phase epitaxy

“…This attracts extensive interests in long-wavelength (8)(9)(10)(11)(12) lm) infrared detector fabrication using InSb-based InAsSb materials [2][3][4]. Furthermore, the better stability, faster response rate and higher room-temperature electron mobility make InAs x Sb 1 À x an alternative material to Hg x Cd 1 À x Te [5][6][7]. InAs x Sb 1 À x with a full composition range (0 < x < 1) had been successfully grown by nonequilibrium process, such as molecular beam epitaxy (MBE) [2,[8][9][10] and metal organic chemical vapor deposition (MOCVD) [3,4,[11][12][13].…”