Improvement of the structural and electrical properties of InAsSb epilayer using Sb-rich InAsSb buffer layer grown by hot wall epitaxy

The complete absorption spectra of InAs0.87Sb0.13 films grown by liquid phase epitaxy

“…InAs 1−x Sb x epilayer thicknesses of 5.9 m and 4.3 m as listed in Table 1 far exceed the critical thickness values above mentioned, which means strain in the InAs 1−x Sb x heteroepitaxy film is almost completely relaxed. Vegard's law is a widely accepted way to obtain the composition of ternary alloy in the condition of the complete relaxation of strain [13][14][15]. Then the Sb contents of InAs 1−x Sb x epilayers are determined to be x1 = 0.08, x2 = 0.13 according to Vegard's law, which are also consistent with the EDAX results.…”

Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film

“…InAs 1−x Sb x has the smallest band gap among all conventional III-V alloys [1][2][3], which has attracted extensive interest for long-wavelength (8-12 m) optoelectronic applications. In recent years, ternary InAs 1−x Sb x has shown its potential usefulness for 8-12 m room-temperature devices [4][5][6].…”

Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD

“…So the strip pyramids are not the separate elemental antimony or indium phase. Nakamura [7,14] thought the strip pyramids imply a different incorporation behavior of the atoms to the growth surface compared with other compositional InAs x Sb 1−x (x ≤ 0.6). Surface morphology of the InAs 0.9 Sb 0.1 epilayers grown without buffer layers appears higher density of small paralleling strip pyramids (not shown here) which caused by compressive strains between epilayers and GaAs substrates.…”

“…So there exist compressive strains between epilayers and substrates which induce kinds of defects. The problem can be reduced by the incorporation of thin strained layers or by the growth of buffer layers with or without graded lattice parameters [6][7][8][9]. Supperlattice based on InAsSb are principally used as buffer layers.…”