Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epitaxy

Liu, Xinju; Jänes, Peter; Holmström, Petter; Aggerstam, Thomas; Lourdudoss, Sebastian; Thylén, Lars; Andersson, T. G.

doi:10.1016/j.jcrysgro.2006.10.241

Cited by 5 publications

(3 citation statements)

References 11 publications

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“…Hexagonal GaN layers grown on (0001) sapphire substrates with AlN buffers by conventional rf-generated plasmaassisted molecular beam epitaxy (rf-MBE) 8,9) were used for the device fabrication. The thickness of the layers, which were Si-doped layers and had an electron concentration of $1 Â 10 18 cm À3 , was 1 m. The facepack technique (FP) 7) was adopted to modify the surfaces of the layers for the formation of Schottky contacts.…”

Section: Methodsmentioning

confidence: 99%

Fabrication of Red, Green, and Blue Pixels Using Integrated GaN-Based Schottky-Type Light-Emitting Diodes

Honda

Yamaguchi

Sakai

et al. 2013

Jpn. J. Appl. Phys.

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GaN-based UV Schottky-type (ST) LEDs were fabricated using GaN layers grown by molecular beam epitaxy (MBE). Red, green, and blue (RGB) pixels were fabricated using the UV-LEDs and RGB phosphors. Surface modification led to the reduction in reverse-bias leakage current and improved forward-bias characteristics. It was found that the ideality factor, n, was improved with increasing breakdown voltage in the reverse-bias range. We believe that the improvement is due to the reduced number of threading-dislocation (TD)-related leakage paths. The effect of the point defects around the TDs on light emission was reduced by the surface modification because the number of current paths around the TDs was reduced.

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Section: Methodsmentioning

confidence: 99%

Fabrication of Red, Green, and Blue Pixels Using Integrated GaN-Based Schottky-Type Light-Emitting Diodes

Honda

Yamaguchi

Sakai

et al. 2013

Jpn. J. Appl. Phys.

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“…1–3. However, the epitaxial quality related to these devices is typically plagued by a large number of threading dislocations (TDs) embedded in the GaN epitaxial layer owing to a large lattice mismatch between GaN and the sapphire substrate 4. In order to suppress TD densities and improve the crystal quality of the GaN epitaxial layer, we propose to insert a 5‐pair, reduced growth temperature AlGaN–GaN intermediate layer between the two high‐temperature grown GaN layers.…”

Section: Introductionmentioning

confidence: 99%

GaN‐based Schottky barrier ultraviolet photodetector with a 5‐pair AlGaN–GaN intermediate layer

Lee

Chang

et al. 2011

Physica Status Solidi (a)

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A GaN-based Schottky barrier diode (SBD) with a 5-pair AlGaN-GaN intermediate layer for ultraviolet (UV) photodetector (PD) was fabricated and investigated. It was found that we could achieve a smaller dark leakage current and noise level by using the 5-pair AlGaN-GaN intermediate layer. For our device biased at À5 V, the responsivity at 360 nm was found to be 0.26 A/W and the UV-to-visible rejection ratio was estimated to be 1.83 Â 10 4 . At the same bias, it was found that minimum noise equivalent power and normalized detectivity of our device were 1.00 Â 10 À9 W and 1.45 Â 10 9 cm Hz 0.5 W À1 , respectively. This indicates a simple and effective way to fabricate high-performance PDs for UV detection.

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“…The substrate surfaces were generated by deposition of ~140-230 nm either GaN or AlN layers on c-plane sapphire. The substrate preparation and layer growth procedures are described elsewhere [6]. Reflection high energy electron diffraction (RHEED) was used to examine the growth procedure during the whole period.…”

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confidence: 99%

Initial boron growth on GaN and AlN surfaces by molecular beam epitaxy

Farivar

Andersson

2010

Phys. Status Solidi (c)

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Elemental boron was thermally deposited, using the MBE‐technique, on surfaces of AlN and GaN. To suppress boron clustering, nitrogen was supplied from an RF nitrogen plasma source. Reflection high energy electron diffraction was used to monitor the surface before and during the growth. On the GaN surface, low concentrations of boron (∼0.1 ML) resulted in additional 6‐fold highly streaky reflection rods indicating a reconstructed GaN(0001) surface. By increasing the boron concentration to ∼0.5 ML, however, the growth resulted in the formation of 3D islands as observed by spots in the RHEED pattern. Islands were also observed by atomic force microscopy and scanning electron microscopy. The AlN surface produced surface morphological features already for the lowest boron concentration, i.e. ∼0.1 ML coverage. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epitaxy

Cited by 5 publications

References 11 publications

Fabrication of Red, Green, and Blue Pixels Using Integrated GaN-Based Schottky-Type Light-Emitting Diodes

Fabrication of Red, Green, and Blue Pixels Using Integrated GaN-Based Schottky-Type Light-Emitting Diodes

GaN‐based Schottky barrier ultraviolet photodetector with a 5‐pair AlGaN–GaN intermediate layer

Initial boron growth on GaN and AlN surfaces by molecular beam epitaxy

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