A GaN-based Schottky barrier diode (SBD) with a 5-pair AlGaN-GaN intermediate layer for ultraviolet (UV) photodetector (PD) was fabricated and investigated. It was found that we could achieve a smaller dark leakage current and noise level by using the 5-pair AlGaN-GaN intermediate layer. For our device biased at À5 V, the responsivity at 360 nm was found to be 0.26 A/W and the UV-to-visible rejection ratio was estimated to be 1.83 Â 10 4 . At the same bias, it was found that minimum noise equivalent power and normalized detectivity of our device were 1.00 Â 10 À9 W and 1.45 Â 10 9 cm Hz 0.5 W À1 , respectively. This indicates a simple and effective way to fabricate high-performance PDs for UV detection.
Electron mobility enhancement in ZnO thin films via surface modification by carboxylic acids Appl. Phys. Lett. 102, 041602 (2013); 10.1063/1.4790155 Microfluidic pumps employing surface acoustic waves generated in ZnO thin films J. Appl. Phys. 105, 024508 (2009); 10.1063/1.3068326 Self-assembled monolayers for reduced temperature direct metal thermocompression bonding Appl. Phys. Lett. 91, 061913 (2007);
Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 ± 0.1 eV and conduction band offset of 1.61 ± 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.
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