2013
DOI: 10.1063/1.4813107
|View full text |Cite
|
Sign up to set email alerts
|

Effect of surface modification by self-assembled monolayer on the ZnO film ultraviolet sensor

Abstract: Electron mobility enhancement in ZnO thin films via surface modification by carboxylic acids Appl. Phys. Lett. 102, 041602 (2013); 10.1063/1.4790155 Microfluidic pumps employing surface acoustic waves generated in ZnO thin films J. Appl. Phys. 105, 024508 (2009); 10.1063/1.3068326 Self-assembled monolayers for reduced temperature direct metal thermocompression bonding Appl. Phys. Lett. 91, 061913 (2007);

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
6
0

Year Published

2014
2014
2022
2022

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 8 publications
(7 citation statements)
references
References 19 publications
0
6
0
Order By: Relevance
“…Deconvolution based on the Gaussian distribution revealed that each of these peaks contained two subpeaks identified as from the p-SiOCH and assembled APTMS molecules. Among which, the intensities of the parent p-SiOCH (103.0 eV) subpeak gradually diminished, associated with the appearance of a new subpeak at approximately 102.2–102.4 eV collectively contributed from the O–Si–O bridges , and Si–OCH 3 dangling groups , of the assembled APTMS nanolayers. Ultimately at 60 min, the parent p-SiOCH (103.0 eV) subpeak disappeared, leaving only a symmetric peak centered at 102.2 eV (≥60 min), which is a characteristic of fully assembled APTMS monolayers. , …”
Section: Resultsmentioning
confidence: 99%
“…Deconvolution based on the Gaussian distribution revealed that each of these peaks contained two subpeaks identified as from the p-SiOCH and assembled APTMS molecules. Among which, the intensities of the parent p-SiOCH (103.0 eV) subpeak gradually diminished, associated with the appearance of a new subpeak at approximately 102.2–102.4 eV collectively contributed from the O–Si–O bridges , and Si–OCH 3 dangling groups , of the assembled APTMS nanolayers. Ultimately at 60 min, the parent p-SiOCH (103.0 eV) subpeak disappeared, leaving only a symmetric peak centered at 102.2 eV (≥60 min), which is a characteristic of fully assembled APTMS monolayers. , …”
Section: Resultsmentioning
confidence: 99%
“…Wang et al [15] used Ag nanoparticles decorating ZnO NR surfaces to facilitate the separation of photogenerated carriers and improve the photo response performance of the UV photodetectors. Chen et al [16] modified a 3-aminopropyltrimethoxysilane monolayer on the surface of the ZnO film to reduce the negative influences of adsorbed oxygen molecules and improve the performance of the ZnO UV sensor. Among various oxide semiconductor materials, CuO is a common metal oxide, which is an intrinsic p-type semiconductor and shows a small band gap (1.2 eV) [17].…”
Section: Introductionmentioning
confidence: 99%
“…The primary interest in this work stemmed from our ongoing work, utilizing surface modified ZnO QDs interfaced with conductive polymers to form hybrid UV photodetectors. This type of hybrid material can be applied in the other hybrid devices such as solar cells [15], gas sensors [16], transistors [17], etc. It is of note that the electronic and physical properties of interfaces between ZnO and other materials can be changed by modifying the surface of ZnO with organic molecules [18,19] …”
Section: Introductionmentioning
confidence: 99%