Abstract:GaN-based UV Schottky-type (ST) LEDs were fabricated using GaN layers grown by molecular beam epitaxy (MBE). Red, green, and blue (RGB) pixels were fabricated using the UV-LEDs and RGB phosphors. Surface modification led to the reduction in reverse-bias leakage current and improved forward-bias characteristics. It was found that the ideality factor, n, was improved with increasing breakdown voltage in the reverse-bias range. We believe that the improvement is due to the reduced number of threading-dislocation … Show more
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