Growth of GaAsBi/GaAs multiple quantum wells with up to 120 periods

Rockett, Thomas B. O.; Adham, Nada A.; Harun, Faezah; David, J.P.R.; Richards, Robert D.

doi:10.1016/j.jcrysgro.2022.126679

Cited by 3 publications

(1 citation statement)

References 35 publications

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“…For QW03 to QW40, a similar roll off is seen, showing that they share an absorption edge at ~1,107 nm. This similarity is expected because they have similar amount of Bi percentage and represented in room temperature PL peak result as reported in [8]. Meanwhile, QW54 and QW63 exhibit lower-than-expected amount of photocurrent and they show an absorption edge at about 1,180 nm.…”

Section: Photocurrent Measurementssupporting

confidence: 77%

Opto-Electronic Characterisation of GaAsBi/GaAs Multiple Quantum Wells for Photovoltaic Applications

Harun

Rusli

Richards

et al. 2023

SSP

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A series of GaAsBi/GaAs multiple quantum well p-i-n diodes was grown using molecular beam epitaxy and the opto-electrical characterisations are presented. The result shows that devices experience low carrier extractions when light is absorbed due to hole trapping in the valence band. Carrier enhancement can be achieved by applying slight reverse bias when the measurement was taken. The absorption coefficient of the devices is confirmed to be similar with other Bi-based work. GaAsBi/GaAs multiple quantum well do have a lot of room for improvement especially on growth, structure and strain level of the material. If these components can be catered, GaAsBi can be a competitive alternative for 1 eV junction in multiple junction solar cells.

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Section: Photocurrent Measurementssupporting

confidence: 77%