Opto-Electronic Characterisation of GaAsBi/GaAs Multiple Quantum Wells for Photovoltaic Applications

Abstract

A series of GaAsBi/GaAs multiple quantum well p-i-n diodes was grown using molecular beam epitaxy and the opto-electrical characterisations are presented. The result shows that devices experience low carrier extractions when light is absorbed due to hole trapping in the valence band. Carrier enhancement can be achieved by applying slight reverse bias when the measurement was taken. The absorption coefficient of the devices is confirmed to be similar with other Bi-based work. GaAsBi/GaAs multiple quantum well do have a lot of room for improvement especially on growth, structure and strain level of the material. If these components can be catered, GaAsBi can be a competitive alternative for 1 eV junction in multiple junction solar cells.

The Carbon Stocks Estimation on The Green Belt of Mataram City

“…Untuk Kelas Tiang, memiliki diameter 10 cm sampai 19,9 cm 3. Untuk Kelas Pohon, memiliki diameter sama atau lebih besar dari 20 cm (Farmen et al, 2014). Ketinggian pohon diukur dengan cara menarik jarak dari pohon ke titik pengukuran dengan meteran, kemudian di tembakkan sudut untuk pangkal pohon dan puncak pohon dengan Suunto Klinometer dan data yang didapat dimasukkan ke dalam rumus : Tinggi = T = S tg α + S tg β .…”