Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns

Bougrioua, Z.; Gibart, P.; Calleja, E.; Jahn, U.; Trampert, A.; Ristić, Jelena; Utrera, M.; Nataf, G.

doi:10.1016/j.jcrysgro.2007.09.030

Cited by 34 publications

(21 citation statements)

References 30 publications

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“…To improve the efficiency of GaN-based devices, various strategies are employed with the aim to reduce the high dislocation densities inherent to the heteroepitaxial growth of GaN and avoiding polarization fields which are detrimental to optical devices [2,3]. However, these growth strategies often result in the formation of stacking faults: Especially the growth of non-and semi-polar GaN layers [4][5][6][7][8] as well as epitaxial-lateral overgrowth [9][10][11][12][13][14] or the coalescence overgrowth of nanowires [15][16][17][18] are associated with the formation of basal-plane stacking faults independent of which growth technique is used. As a consequence, the emission characteristics and transport properties of the layers are changed [11,19].…”

Section: Introductionmentioning

confidence: 99%

Luminescence associated with stacking faults in GaN

Lähnemann¹,

Jahn²,

Brandt³

et al. 2014

J. Phys. D: Appl. Phys.

107

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Abstract. Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the host crystal, resulting in the localization of excitons. Due to the two-dimensional nature of these planar defects, stacking faults act as quantum wells, giving rise to radiative transitions of excitons with characteristic energies. Luminescence spectroscopy is thus capable of detecting even a single stacking fault in an otherwise perfect wurtzite crystal. This review draws a comprehensive picture of the luminescence properties related to stacking faults in GaN. The emission energies associated with different types of stacking faults as well as factors that can shift these energies are discussed. In this context, the importance of the quantum-confined Stark effect in these zinc-blende/wurtzite heterostructures, which results from the spontaneous polarization of wurtzite GaN, is underlined. This discussion is extended to zinc-blende segments in a wurtzite matrix. Furthermore, other factors affecting the emission energy and linewidth of stacking fault-related peaks as well as results obtained at room temperature are addressed. The considerations presented in this article should be transferable also to other wurtzite semiconductors.

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Section: Introductionmentioning

confidence: 99%

Luminescence associated with stacking faults in GaN

Lähnemann¹,

Jahn²,

Brandt³

et al. 2014

J. Phys. D: Appl. Phys.

107

View full text Add to dashboard Cite

show abstract

“…This process continues until a complete layer of GaN is formed. In previous work, this technique has been successfully demonstrated for sapphire substrates [4][5][6][7][8][9][10][11][12], whereas there are only a few reports concerning Si as substrate [13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy

Dogan¹,

Brandt²,

Pfüller³

et al. 2011

Journal of Crystal Growth

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“…Several growth methods are employed to reduce the density of TDs, such as (a) growing a thick GaN film by halide chemical vapor epitaxy (HVPE) [7], (b) using a patterned substrate as a template substrate [8,9], (c) pillar-assisted epitaxial lateral overgrowth (PELO) along self-assembled nanorods [10], and (d) microchannel epitaxy (MCE) [11][12][13][14]. High quality epitaxial layers with a low density of TDs can therefore be achieved at the lateral overgrown regions where TDs cannot transfer from the substrate using growth methods (b) to (d).…”

Section: Introductionmentioning

confidence: 99%