Growth of free-standing wurtzite AlGaN by MBE using a highly efficient RF plasma source

Abstract

Ultraviolet light emitting diodes (UV LEDs) are now being developed for various potential applications including water purification, surface decontamination, optical sensing, and solid-state lighting. The basis for this development is the successful production of AlxGa1−xN UV LEDs grown by either metal-organic vapor phase epitaxy (MOVPE) or molecular beam epitaxy (MBE). Initial studies used mainly sapphire as the substrate, but this result in a high density of defects in the epitaxial films and now bulk GaN or AlN substrates are being used to reduce this to acceptable values. However, the lattice parameters of GaN and AlN are significantly different, so any AlGaN alloy grown on either substrate will still be strained. If, however, AlGaN substrates were available, this problem could be avoided and an overall lattice match achieved. At present, the existing bulk GaN and AlN substrates are produced by MOVPE and physical vapor transport, but thick free-standing films of AlGaN are difficult to produce by either method. The authors have used plasma-assisted MBE to grow free-standing AlxGa1−xN up to 100 μm in thickness using both an HD25 source from Oxford Applied Research and a novel high efficiency source from Riber to provide active nitrogen. Films were grown on 2- and 3-in. diameter sapphire and GaAs (111)B substrates with growth rates ranging from 0.2 to 3 μm/h and with AlN contents of 0% and ∼20%. Secondary ion mass spectrometer studies show uniform incorporation of Al, Ga, and N throughout the films, and strong room temperature photoluminescence is observed in all cases. For films grown on GaAs, the authors obtained free-standing AlGaN substrates for subsequent growth by MOVPE or MBE by removing the GaAs using a standard chemical etchant. The use of high growth rates makes this a potentially viable commercial process since AlxGa1−xN free-standing films can be grown in a single day and potentially this method could be extended to a multiwafer system with a suitable plasma source.

Two-dimensional group-III nitrides and devices: a critical review

“…Thanks to the precise control of the plasma energy and growth Additionally, other researchers continued to improve the performance of 2D GaN. Chen et al [148] developed a new preparation method that significantly improved the room temperature photoluminescence (PL) property by about 48 times compared with that of the current mainstream GaN [149]. In that study, researchers spread liquid gallium on a tungsten (W) foil at 1080 • C, in which the surface Ga acted as the template to grow 2D GaN.…”

Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

“…Moreover, the MBE growth takes place at lower substrate temperatures compared with other growth techniques for the same material. For example, the substrate temperature for growing AlGaN thin films by MBE is generally below 800 C, [88][89][90][91][92] whereas by MOCVD it requires 1000-1200 C. [24,34,[93][94][95] Lastly, the MBE growth chamber is equipped with RHEED, which allows an in situ monitoring of the growth and an instantaneous adjustment on the growth parameters, beneficial to the growth of ultrathin layers, e.g., the monolayer (ML)-thick GaN QWs. [96][97][98] In the next two subsections, we will show that benefited from these merits, high-quality AlGaN alloys including both thin films and nanowires can be grown by MBE, which provides a promising path to the electrically injected AlGaN DUV lasers by MBE.…”