1982
DOI: 10.1007/bf01203472
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Growth of diamond particles from methane-hydrogen gas

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Cited by 626 publications
(119 citation statements)
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“…Most CVD diamond shows a dominant triangular (111) face. When the substrate temperature becomes relatively high, more (100) faces appear [34,110,114]. It is known that the shape of a diamond crystal depends on the deposition conditions which may influence the relative growth rate of constituent crystallographic planes.…”
Section: Effect Of Deposition Parameters On Diamond Nucleation and Grmentioning
confidence: 99%
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“…Most CVD diamond shows a dominant triangular (111) face. When the substrate temperature becomes relatively high, more (100) faces appear [34,110,114]. It is known that the shape of a diamond crystal depends on the deposition conditions which may influence the relative growth rate of constituent crystallographic planes.…”
Section: Effect Of Deposition Parameters On Diamond Nucleation and Grmentioning
confidence: 99%
“…A Japanese group, the National Institute for Research in Inorganic Materials (NIRIM), first published a remarkable series of papers in which different techniques, hot-filament CVD process, RF-plasma CVD, and microwave plasma CVD were described [33][34][35][36]. They reported that diamond particles and films could be deposited on various substrates heated around 850 °C, using a mixed gas of methane diluted by hydrogen, and preferred partial pressures in the range 4×10 3 to 5×10 3 Pa. A growth rate higher than several microns per hour was achieved.…”
Section: Development In Diamond Synthesis By Cvdmentioning
confidence: 99%
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“…In 1982, good quality diamond films were grown at significant rates using a hot filament CVD reactor. 124,125 Microwave plasma CVD reactors are similar to the hot filament method, except that microwave power is coupled into the chamber in place of the hot filament. Finally, diamond films can be deposited under nearly ambient conditions through the use of a gas jet.…”
Section: Wide Band Gap Materialsmentioning
confidence: 99%
“…After the advent of low pressure gas phase synthesis (CVD) of diamond thin films [38][39][40], numerous noteworthy and path breaking advances have successively taken place [1][2][3][4][5][6][7][8][9][10][11][41][42][43][44][45][46][47][48][49]; these advances have made the following possible: (i) tremendous increase in diamond thin film growth rates, (ii) substrate selectivity and large area deposition, (iii) low temperature deposition, (iv) single crystalline thin film synthesis, (v) phase mixture diamond nanocomposite thin film deposition, (vi) doped diamond thin film synthesis, and so forth. At present various CVD methods such as hot filament, direct current (DC) plasma, radio frequency (RF) plasma, microwave plasma, electron cyclotron resonance (ECR) microwave plasma CVD, and so forth, and their hybrids are being used to synthesize diamond thin films with highly consistent and desired properties.…”
Section: Cvd Of Diamond Thin Filmsmentioning
confidence: 99%