2012
DOI: 10.1155/2012/218393
|View full text |Cite
|
Sign up to set email alerts
|

A Brief Review on theIn SituSynthesis of Boron-Doped Diamond Thin Films

Abstract: Diamond thin films are well known for their unsurpassed physical and chemical properties. In the recent past, research interests in the synthesis of conductive diamond thin films, especially the boron-doped diamond (BDD) thin films, have risen up to cater to the requirements of electronic, biosensoric, and electrochemical applications. BDD thin films are obtained by substituting some of the sp 3 hybridized carbon atoms in the diamond lattice with boron atoms. Depending on diamond thin film synthesis conditions… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
17
0

Year Published

2014
2014
2024
2024

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 24 publications
(17 citation statements)
references
References 78 publications
(91 reference statements)
0
17
0
Order By: Relevance
“…In order to get such materials, additional chemical species are introduced during the synthesis process. For a p-type semiconductor, for example, a common practice consists of adding trimethylboron, diborane, triethylboron to the usual reactants (H 2 and CH 4 ), and, at the end, boron atoms are incorporated into the crystal structure [13]. Obtaining a p-type material is now well established.…”
Section: Introductionmentioning
confidence: 99%
“…In order to get such materials, additional chemical species are introduced during the synthesis process. For a p-type semiconductor, for example, a common practice consists of adding trimethylboron, diborane, triethylboron to the usual reactants (H 2 and CH 4 ), and, at the end, boron atoms are incorporated into the crystal structure [13]. Obtaining a p-type material is now well established.…”
Section: Introductionmentioning
confidence: 99%
“…The mechanism of diamond growth in CVD method is explained very neatly in various articles. [2,13,14] Growth rate of diamond in CVD technique is in the range of 0.1 to 2 μm h À 1 . [13] The favorable conditions for diamond growth in CVD method are: substrate temperature of 700-1000°C, methane concentration of 0.3-1 % in hydrogen, gas pressure of 10-150 torr, filament temperatures up to~2800°C, microwave powers of 1000-1300 W, and reaction time of 3 h. [1,13] Thickness of diamond film formed by CVD method is between 1-10 mm.…”
Section: Synthesis Of Bddmentioning
confidence: 99%
“…The continuous production of H 2 O 2 in electro-Fenton process promotes reaction (14) and regeneration of the Fe 2 + from electroreduction of Fe 3 + (Eq. (9)) generated in this reaction.…”
Section: Electro-fenton Pyritementioning
confidence: 99%
“…Typical CVD diamond synthesis includes activation of a gas mixture, gas phase reactions and a subsequent transfer of the diamond forming gas species onto the substrate surface [3]. To obtain conducting material boron was introduced in the reactions chamber during the growth process.…”
Section: Synthesis Of Nanocrystalline Diamond (Ncd) Filmsmentioning
confidence: 99%