Growth of device quality GaN at 550 °C by atomic layer epitaxy

Karam, N.H.; Parodos, T.; Colter, P. C.; McNulty, David; Rowland, W. H.; Schetzina, J. F.; El‐Masry, N. A.; Bedair, S. M.

doi:10.1063/1.115519

Cited by 65 publications

(32 citation statements)

References 5 publications

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“…This value is consistent with the absorption coefficient of GaN reported elsewhere. 11 Figure 18 shows etch depth profiles obtained in the laser etching of GaN films at various energy densities. The original surface roughness of the GaN film is about few 10 nm.…”

Section: Pulsed Laser Etching Of Gan and Aln Nitridesmentioning

confidence: 99%

“…The other approach followed recently by several workers is the epitaxial lateral over growth (ELOG) of GaN, 6 which resulted in a significant reduction of the dislocation densities in the GaN films that improved the life of the blue lasers. 7 Most of the GaN researchers so far have employed growth techniques based on chemical vapor deposition (low pressure and atmospheric pressure metalorganic chemical vapor deposition (MOCVD), 8,9 atomic layer epitaxy (ALE), 10,11 vapor phase epitaxy (VPE)), 12,13 and molecular beam epitaxy (N 2 plasma assisted or NH 3 reactive molecular beam epitaxy). 14,15 In CVD, the gases such as TMG, TMA, and TMI react with NH 3 at a substrate temperature of 1050°C.…”

Section: Introductionmentioning

confidence: 99%

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Pulsed laser deposition and processing of wide band gap semiconductors and related materials

Vispute

Choopun

Enck

et al. 1999

Journal of Elec Materi

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The present work describes the novel, relatively simple, and efficient technique of pulsed laser deposition for rapid prototyping of thin films and multi-layer heterostructures of wide band gap semiconductors and related materials. In this method, a KrF pulsed excimer laser is used for ablation of polycrystalline, stoichiometric targets of wide band gap materials. Upon laser absorption by the target surface, a strong plasma plume is produced which then condenses onto the substrate, kept at a suitable distance from the target surface. We have optimized the processing parameters such as laser fluence, substrate temperature, background gas pressure, target to substrate distance, and pulse repetition rate for the growth of high quality crystalline thin films and heterostructures. The films have been characterized by x-ray diffraction, Rutherford backscattering and ion channeling spectrometry, high resolution transmission electron microscopy, atomic force microscopy, ultraviolet (UV)-visible spectroscopy, cathodoluminescence, and electrical transport measurements. We show that high quality AlN and GaN thin films can be grown by pulsed laser deposition at relatively lower substrate temperatures (750-800°C) than those employed in metalorganic chemical vapor deposition (MOCVD), (1000-1100°C), an alternative growth method. The pulsed laser deposited GaN films (~0.5 µm thick), grown on AlN buffered sapphire (0001), shows an x-ray diffraction rocking curve full width at half maximum (FWHM) of 5-7 arc-min. The ion channeling minimum yield in the surface region for AlN and GaN is ~3%, indicating a high degree of crystallinity. The optical band gap for AlN and GaN is found to be 6.2 and 3.4 eV, respectively. These epitaxial films are shiny, and the surface root mean square roughness is ~5-15 nm. The electrical resistivity of the GaN films is in the range of 10 -2 -10 2 Ω-cm with a mobility in excess of 80 cm 2 V -1 s -1 and a carrier concentration of 10 17 -10 19 cm -3 , depending upon the buffer layers and growth conditions. We have also demonstrated the application of the pulsed laser deposition technique for integration of technologically important materials with the III-V nitrides. The examples include pulsed laser deposition of ZnO/GaN heterostructures for UV-blue lasers and epitaxial growth of TiN on GaN and SiC for low resistance ohmic contact metallization. Employing the pulsed laser, we also demonstrate a dry etching process for GaN and AlN films.

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Section: Pulsed Laser Etching Of Gan and Aln Nitridesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Pulsed laser deposition and processing of wide band gap semiconductors and related materials

Vispute

Choopun

Enck

et al. 1999

Journal of Elec Materi

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show abstract

“…By separately exposing the substrate with individual constituent sources, homogeneous gas-phase reactions are suppressed and adatoms are expected to have enhanced surface mobility [3]. Since its first demonstration of GaAs ALE for III-V materials [4], the ALE method has been widely employed in the growth of nanostructures such as quantum wells (QWs) [5,6], quantum dots (QDs) [7,8], and delta-doped layers [9,10], III-V compound binary semiconductor films for such as GaAs, InAs, InP, GaN, and AlN, as well as the AlGaAs ternary alloy [2,[11][12][13][14][15][16][17]. ALE growth of compound semiconductors using metalorganic (MO) and hydride sources can be readily implemented in a commercial metalorganic chemical vapor deposition (MOCVD) reactor.…”

Section: Introductionmentioning

confidence: 99%

Incorporation of indium and gallium in atomic layer epitaxy of InGaAs on InP substrates

Huang

Ryou

Dupuis

2011

Journal of Crystal Growth

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“…6) Low-temperature growth of GaN is attractive for reducing the effects mentioned above. Efforts have been made to grow GaN at lower temperatures, such as by using MOCVD, 7) atomic layer epitaxy 8) and remote-plasmaenhanced organometallic vapor-phase epitaxy. 9) We studied the low-temperature growth of GaN epitaxial layers by a reactive close-spaced method in which the GaN epitaxial layers were grown by the direct reaction of Ga and NH 3 at the low temperature of 750 C under pressure of 1 Torr.…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Growth of GaN Epitaxial Layers with Buffer Layers by Reactive Close-Spaced Method

Watanabe¹,

Sano²

2003

Jpn. J. Appl. Phys.

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GaN epitaxial layers with buffer layers were grown on (0001) sapphire substrates by direct reaction of Ga and NH 3 at the low temperature of 750 C. The buffer layers were deposited on the substrates by using GaN-coated graphite boats at temperatures below 750 C in Ar flow before the epitaxial layers were grown, where GaN films coated on the graphite boats acted as a source material in the deposition of the buffer layers. The Hall mobility of the GaN epitaxial layers grown with the buffer layers was approximately 50 cm 2 /(VÁs), whereas that of the GaN epitaxial layers grown without the buffer layers was approximately 2 cm 2 /(VÁs). The crystallinity of the GaN epitaxial layer was improved by being grown on the buffer layer. The buffer layer deposited by using the GaN-coated graphite boat played a role similar to that of the buffer layer deposited at low temperature by conventional metal-organic chemical vapor deposition.

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Growth of device quality GaN at 550 °C by atomic layer epitaxy

Abstract: Thermally annealed GaN nucleation layers and the devicequality metal organic chemical vapor deposition growth of Sidoped GaN films on (00.1) sapphire

Cited by 65 publications

References 5 publications

Pulsed laser deposition and processing of wide band gap semiconductors and related materials

Pulsed laser deposition and processing of wide band gap semiconductors and related materials

Incorporation of indium and gallium in atomic layer epitaxy of InGaAs on InP substrates

Low-Temperature Growth of GaN Epitaxial Layers with Buffer Layers by Reactive Close-Spaced Method

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