Growth of cubic InN on InAs(001) by plasma-assisted molecular beam epitaxy

Heteroepitaxy of Doped and Undoped Cubic Group III-Nitrides

“…The In composition x of the layers was measured by X-ray measurements (w±2q scans) assuming the validity of Vegard's law [44]. For the linear interpolation the lattice constants used are a GaN 0.453 nm and a InN 0.497 nm, respectively [45,46]. In some cases the In content was also measured by Rutherford backscattering (RBS) [47], which agreed within the experimental error with the X-ray data.…”

Photoluminescence of cubic InN films on MgO (001) substrates

“…Cubic III nitride semiconductors have several advantages for electronic and optoelectronic device applications compared with hexagonal ones [1], for instance, no piezoelectric nor spontaneous polarization-induced electric fields, which exist in hexagonal III nitride semiconductors and lead to the lowering of optical transition probability. Although a number of papers have reported the growth and characterization of cubic GaN (c-GaN), AlN and their alloy [2,3], the growth of cubic InN (c-InN) has been less reported [4][5][6]. Furthermore, little has been reported on the physical properties, such as band gap energy of c-InN.…”

Phase transition, and elastic and thermodynamic properties of InN derived from first‐principles and the quasi‐harmonic Debye model

“…Recently, Indium nitride has been widely studied owing to its potential applications, on one side, and the seemingly conflicting results of various investigations on the band gap [4][5][6][7][8], on the other side. InN crystallizes as a hexagonal WZ structure under normal conditions [1,2,[9][10][11], successful growth [12][13][14] has also reported that InN grows in zincblende (ZB) structure. Then, Serrano et al [15] confirm that the ZB phase is indeed metastable using first-principles calculations, although it lies close in enthalpy to the stable WZ form.…”