Photoluminescence of cubic InN films on MgO (001) substrates

Abstract

We have studied photoluminescence from cubic InN films grown on MgO substrates with a cubic GaN underlayer by RF N2 plasma molecular beam epitaxy. A single PL peak was observed at 0.47 eV. By analyzing the reflectance spectra of cubic InN films, we could derive the refractive index and extinction coefficient, and found the band gap energy of cubic InN is 0.48 eV, indicating that the PL peak observed at 0.47 eV is due to the interband transition of cubic InN. The difference in the PL peak energy between hexagonal and cubic InN is in good agreement with that predicted by ab‐initio calculations. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Self‐organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates

“…Similar structures are also observed for c‐GaN grown using Si (001) substrates . This is due to the existence of two orthogonal domains of c‐GaN: one domain is c‐GaN (001) of which the [110] direction is parallel to [110] of a substrate, while it is parallel to of the substrate in the other domain. The typical scale of the domain size is 300–500 nm, as shown in the image of a c‐GaN surface grown on a MgO (001) substrate taken by atomic force microscopy (AFM) in Fig.…”

“…InN quantum dots (QDs) embedded in GaN have attracted attention because of their potential for optoelectronic devices working from the infrared to the ultraviolet wavelength range. By using a combination of cubic phase nitride semiconductors, it is possible to extend the applicable wavelength range because various experimental and theoretical studies suggest that metastable cubic InN (c‐InN) has a smaller bandgap than conventional hexagonal InN . Previously, we reported the self‐organized growth of c‐InN nanoscale dots on cubic GaN (c‐GaN) layers using MgO (001) substrates by RF‐N 2 ‐plasma molecular beam epitaxy (RF‐MBE) .…”

Critical thickness of β-InN/GaN/MgO structures

“…[11][12][13][14][15] Although there are a few reports in the literature dealing with the growth of cubic InN on MgO substrates using a GaN buffer layer, [16][17][18] there is no information about the critical thickness and the relaxation processes entailed in the growth of InN on the GaN/MgO structure. Misfit dislocation formation is usually described by the classical Frank-van der Merwe ͑FvdM͒ model 11,12 on the basis of energy considerations.…”

Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN

“…ZB phase of nitrides have been widely studied in the case of GaN, [11][12][13][14] and InN. [15][16][17] Obtaining pure WZ-InN is an important issue for further improvement of the crystal quality of InN grown by PR-MOVPE. Understanding the nature of ZB-InN inclusion by investigating its effect on the crystal quality is still needed to achieve this goal.…”