Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN

Iwabuchi, Takashi; Liu, Yuhuai; Kimura, Takeshi; Zhang, Yuantao; Prasertsuk, Kiattiwut; Watanabe, Hiroshi; Usami, Noritaka; Katayama, Ryuji; Matsuoka, Takashi

doi:10.1143/jjap.51.04dh02

Cited by 5 publications

(1 citation statement)

References 18 publications

(18 reference statements)

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“…The atomic-scale resolved interface structure, particularly the direct visualization of N atoms, demonstrates the successful growth of high-quality InGaN/GaN MQWs on the semipolar (01-11) plane. Moreover, such design and successful growth of high-quality InGaN/GaN MQWs on the semipolar (01-11) GaN substrate would preferably solve the challenges of growing N-polar InGaN/GaN MQWs. − …”

Section: Resultsmentioning

confidence: 99%

Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells

Hao

Zhang

Sun

et al. 2022

ACS Appl. Mater. Interfaces

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The model system of the InGaN/GaN quantum wells (QWs), based on the first principles calculation, was chosen to understand the underlying mechanism of interfacial polarization and its synergic effect with the built-in electric field (B ef ) at the p−n junction in solar cells (SLs). The polarized electric field (P ef ) was generated due to the redistribution of electrons and holes at the interface; moreover, the P ef of InGaN/GaN heterostructure on the semipolar (01-11) GaN surface was consistent with that of on the N-polar (000-1) surface, which is on the lines of the B ef and favors the electron−hole separation efficiency in SLs. Furthermore, the growth of high-quality InGaN/GaN QWs on the semipolar (01-11) GaN surface was achieved. Such an atomic-scale investigation provides a fundamental understanding of the polarization chargeinduced P ef and its interaction coupling with B ef at the p−n junction, which could be generalized to polar material-based SLs.

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Section: Resultsmentioning

confidence: 99%

Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells

Hao

Zhang

Sun

et al. 2022

ACS Appl. Mater. Interfaces

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InN-based heterojunction photodetector with extended infrared response

Hsu¹,

Kuo²,

Huang³

et al. 2015

Opt. Express

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The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two non-radiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

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Immiscibility behind the metalorganic vapor phase epitaxy of InGaN

Onabe

2019

Jpn. J. Appl. Phys.

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The vapor–solid phase equilibrium and the solid composition versus input group-III ratio relationship for the metalorganic vapor phase epitaxy of InGaN are analyzed on the basis of standard thermodynamics. Immiscibility is inherent in the activities of the InN and GaN components. A miscibility gap (MG) definitely appears in the vapor–solid phase equilibrium below the critical temperature. At a given temperature, the equilibrium partial pressures are fixed at those for the binodal compositions across the MG. In the solid composition versus input group-III ratio diagram, the MG at a given temperature is represented by a straight line which gives a weighted average of the binodal compositions for a given input group-III ratio. The apparently uniform compositions observed in low-temperature growth may be attributed to the non-equilibrium “freeze-out” effect of the growth species due to the slow surface kinetics.

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Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN

Cited by 5 publications

References 18 publications

Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells

Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells

InN-based heterojunction photodetector with extended infrared response

Immiscibility behind the metalorganic vapor phase epitaxy of InGaN

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