Growth of cubic GaN on 3C–SiC/Si (001) nanostructures

Kemper, Ricarda M.; Hiller, Lars; Stauden, Thomas; Pezoldt, Joerg; Duschik, K.; Niendorf, Т.; Maier, Hans-Jürgen; Meertens, D.; Tillmann, Karsten; As, D. J.; Lindner, J.K.N.

doi:10.1016/j.jcrysgro.2012.10.011

Cited by 9 publications

(5 citation statements)

References 9 publications

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“…In the next step, we combine our result for the E P parameter with the experimentally obtained plasma frequencies of our samples using Eqs. (4) and (13). The result is presented in Fig.…”

Section: Table II Characterization Results Of the Investigated Samplmentioning

confidence: 97%

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Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3

Baron

Goldhahn

Deppe

et al. 2019

Phys. Rev. Materials

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We analyze the optical properties of zincblende gallium-nitride in the infrared and ultraviolet spectral range (≈27 meV-6.5 eV) experimentally by spectroscopic ellipsometry and provide a quantitative description of these results by k • p perturbation theory. Free-electron concentrations above 10 20 cm −3 are achieved by introducing germanium as a donor. We determine the dielectric function as well as band filling effects like the Burstein-Moss shift and band gap renormalization. The Kane model for the band structure of semiconductors near the-point allows to calculate the effective electron mass and to determine the nonparabolicity of the conduction band. At the same time, these results can be used to derive the free-electron concentration all-optically. The combination of Kane's model, Burstein-Moss shift, and band-gap renormalization can be used to expertly describe the measured transition energies up to ≈3.7 eV dependent on the carrier concentration, yielding an averaged hole mass of ≈0.61 m e for the contributing valence bands.

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“…In the next step, we combine our result for the E P parameter with the experimentally obtained plasma frequencies of our samples using Eqs. (4) and (13). The result is presented in Fig.…”

Section: Table II Characterization Results Of the Investigated Samplmentioning

confidence: 97%

“…However, zincblende nitrides are metastable [3], making their preparation more challenging than that of their wurtzite counterparts. Consequently, defect control is an important issue for cubic nitrides [4,5] and high defect densities are most likely a major obstacle preventing their usage in devices.…”

Section: Introductionmentioning

confidence: 99%

Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3

Baron

Goldhahn

Deppe

et al. 2019

Phys. Rev. Materials

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“…In this way, III-V layers of remarkably high structural and morphological quality with respect to their low thickness have been achieved in the last ten years. Heteroepitaxial growth of c-GaN on nanopatterned 3C-SiC/Si(001) has also extensively been studied [12,13] but in the following emphasis will be placed on arsenides, phosphides and anti-monides.…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates

Riedl¹,

Lindner²

2017

Nanoscaled Films and Layers

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In the last decade, zinc blende structure III-V semiconductors have been increasingly utilized for the realization of high-performance optoelectronic applications because of their tunable bandgaps, high carrier mobility and the absence of piezoelectric fields. However, the integration of III-V devices on the Si platform commonly used for CMOS electronic circuits still poses a challenge, due to the large densities of mismatch-related defects in heteroepitaxial III-V layers grown on planar Si substrates. A promising method to obtain thin III-V layers of high crystalline quality is the growth on nanopatterned substrates. In this approach, defects can be effectively eliminated by elastic lattice relaxation in three dimensions or confined close to the substrate interface by using aspect-ratio trapping masks. As a result, an etch pit density as low as 3.3 × 10 5 cm −2 and a flat surface of submicron GaAs layers have been accomplished by growth onto a SiO 2 nanohole film patterned Si(001) substrate, where the threading defects are trapped at the SiO 2 mask sidewalls. An open issue that remains to be resolved is to gain a better understanding of the interplay between mask shape, growth conditions and formation of coalescence defects during mask overgrowth in order to achieve thin device quality III-V layers.

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“…On the basis of ECS, we extract a condition for the compensation that drives the groove filling with PDI, from the reduction in the surface free energy of the h -GaN even while both the surface and volume energies of the c -GaN are increased. HPE is radically different from other approaches for III–N on Si, − and is crucial to versatile applications of c -III-N on Si(001). We focus on the activation of the h - c transition and the underlying growth mechanisms that trigger it.…”

Section: Introductionmentioning

confidence: 99%

Atomic-Scale Phase Transition of Epitaxial GaN on Nanostructured Si(001): Activation and Beyond

Lee

Jiang

Durniak

et al. 2016

Crystal Growth & Design

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An atomic-scale phase transition in heterophase epitaxy (HPE) of GaN on a 900 nm-wide v-grooved Si(001) substrate is reported. Two different incorporation mechanisms of adatoms sequentially occur for the hexagonal (h-) to cubic (c-) phase transition: orientation-and phase-dependent incorporation (ODI and PDI). Epitaxy begins with ODI that results in preferential growth of h-GaN individually aligned to opposing Si(111) facets inside a v-groove but incurs a structural instability by crystallographic mismatch at the groove bottom. This instability is relieved by an abrupt transition to c-phase, initiating from single or multiple atomic sites uniquely arranged atop the mismatch along the groove. Epitaxy proceeds with PDI that allows μm-scale c-GaN extended from these sites while suppressing growth of h-GaN. An important condition for HPE and the stability of c-GaN in further growth is derived from equilibrium crystal shape.

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Growth of cubic GaN on 3C–SiC/Si (001) nanostructures

Cited by 9 publications

References 9 publications

Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3

Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3

Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates

Atomic-Scale Phase Transition of Epitaxial GaN on Nanostructured Si(001): Activation and Beyond

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