Growth of Cd1−xZnxTe(x∼0.04) films by hot-wall method and its evaluation

Composition dependence of structural and optical properties of Cd1−Zn Te thick films obtained by the close-spaced sublimation

“…The presence of intense excitonic line indicates a fairly good optical quality of the investigated semiconductor films [62]. The PL band at 1.547 eV is caused by the recombination of free electrons and acceptor centers ((e,A)-transition) [1,14]. By knowing the energy of this PL line and the value of E g (4.5 K) = 1.606 eV for CdTe film, we can determine the energy of the acceptor level as it was done in [54].…”

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

“…It should be noted that the nature of A°X-line may be supported by the analysis of PL spectrum in the long-wavelength spectral range where the PL band at 1.547 eV is associated with the recombination of free electrons and acceptor centers ((e,A)-transition) [1,16]. Since this line is broadened, we may assume that other A°X-exciton complexes also participate in the exciton emission but their intensity is smaller than the above mentioned A°X -line at 1.591 eV.…”

“…At present different methods of Cd 1 À x Zn x Te films deposition such as metalorganic vapor-phase epitaxy [9] metal-organic chemical vapor deposition [10], pulsed laser deposition [11], thermal Contents lists available at ScienceDirect journal homepage: www.elsevier.com/locate/jlumin evaporation [12,13], brush plating technique [14], magnetron sputtering [15], hot wall epitaxy [16], laser ablation [11] were used. Earlier [17], it was shown that a low cost close-spaced vacuum sublimation (CSVS) method makes it possible to deposit the stoichiometric films of II-VI semiconductors with the controllable physical properties using a glass as substrate.…”

Thin film growth of Cd1‐xZnxTe and its application to X‐ray sensor

“…The CZT solid solutions (x~0.5) were synthesized from high purity elements of Cd, Zn and Te with 6-nines grade and the thin films were grown by PVT(Physical Vapor Transport) method [8] without Cd or CdCl 2 reservoir. The measurements of XRD, I-V characteristics, X-ray response and SEM observation were carried out on the grown films.…”

“…The third one is to prepare wide band-gap film by increasing the mole fraction of ZnTe and this produces less intrinsic carriers due to wide gap. The first and second methods were briefly reported before [7,8]. In this study, the results of the third method and synthetic evaluation through three methods are reported.…”