Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

Pawbake, Amit; Mayabadi, Azam; Waykar, Ravindra; Kulkarni, Rupali; Jadhavar, Ashok; Waman, Vaishali P.; Parmar, Jayesh B.; Bhattacharyya, Somnath; Ma, Yuan‐Ron; Devan, Rupesh S.; Pathan, Habib M.; Jadkar, Sandesh

doi:10.1016/j.materresbull.2015.12.012

Cited by 17 publications

(10 citation statements)

References 48 publications

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“…FTIR spectroscopy showed a single strong absorption peak at ~760 cm −1 for all synthesized SiC, corresponding to Si–C stretching mode [ 32 , 33 ]. As shown in Figure 5 a, upon increasing annealing temperature, T A , three notable changes in the absorption spectra were observed: (1) A shift in peak position towards 800 cm −1 ( Figure 5 a), which corresponds to the stretching mode of Si–C bond in crystalline SiC [ 33 , 34 ], (2) substantial narrowing of the full width at half maximum (FWHM) ( Figure 5 b) and, (3) a change in line shape from Gaussian to Lorentzian.…”

Section: Resultsmentioning

confidence: 99%

“…Additionally, strong overlap for the Si 2p binding energy between the annealed SiC and a 3C–SiC standard at ~100.3 eV confirms the chemical bonding of the synthesized materials and NWs are indeed Si–C ( Figure 5 f). The absence of XPS Si 2p peak around ~98.5 and ~103 eV, corresponding to Si–Si and Si–O bonds respectively [ 32 ], also ruled out the possibility of silicon or carbon nanocluster formation, as well as any oxidation.…”

Section: Resultsmentioning

confidence: 99%

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On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays

et al. 2018

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The field of semiconductor nanowires (NWs) has become one of the most active and mature research areas. However, progress in this field has been limited, due to the difficulty in controlling the density, orientation, and placement of the individual NWs, parameters important for mass producing nanodevices. The work presented herein describes a novel nanosynthesis strategy for ultrathin self-aligned silicon carbide (SiC) NW arrays (≤ 20 nm width, 130 nm height and 200–600 nm variable periodicity), with high quality (~2 Å surface roughness, ~2.4 eV optical bandgap) and reproducibility at predetermined locations, using fabrication protocols compatible with silicon microelectronics. Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, ultraviolet-visible spectroscopic ellipsometry, atomic force microscopy, X-ray diffractometry, and transmission electron microscopy studies show nanosynthesis of high-quality polycrystalline cubic 3C-SiC materials (average 5 nm grain size) with tailored properties. An extension of the nanofabrication process is presented for integrating technologically important erbium ions as emission centers at telecom C-band wavelengths. This integration allows for deterministic positioning of the ions and engineering of the ions’ spontaneous emission properties through the resulting NW-based photonic structures, both of which are critical to practical device fabrication for quantum information applications. This holistic approach can enable the development of new scalable SiC nanostructured materials for use in a plethora of emerging applications, such as NW-based sensing, single-photon sources, quantum LEDs, and quantum photonics.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays

et al. 2018

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“…The composition of applied SiC NPs was characterized by the XRD results as shown in Figure 1 a. SiC NPs were proved to belong to the beta crystalline form and they possessed a structure of a cubic crystal system, based on MDI Jade 5.0 analysis software (standard card number is JCPDS 29-1129 for present 3C-SiC). The diffraction angles (2-theta) at 36°, 41.6°, 60°, 72°, and 75.8° should be assigned to crystal indices of (111), (200), (220), (311), and (222) for beta-SiC, respectively [ 32 ]. The 2-theta at 34° should be ascribed to the stacking faults formed in beta-SiC crystal [ 33 ].…”

Section: Resultsmentioning

confidence: 99%

Enhancing High-Frequency Dielectric Properties of Beta-SiC Filled Nanocomposites from Synergy between Percolation and Polarization

Peng

Feng

2018

Materials

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Promising comprehensive properties, including high permittivity, low dielectric loss, high breakdown strength, low electrical conductivity, and high thermal conductivity, are very hard to simultaneously obtain in high-frequency applicable polymer nanocomposite dielectrics. Instead of traditional electric percolation, in this work, a novel route based on a synergy between electric percolation and induced polarization has been raised to prepare 0–3 type nanocomposites with an enhanced high permittivity (high-k) property and low loss at high frequency. This work aimed at optimizing that synergy to achieve the favorable properties mentioned above in composite dielectrics used at high frequencies such as 1 MHz and 1 GHz. Conductive beta-SiC nanoparticles with a particle size of ~30 nm were employed as filler and both insulating poly(vinyl alcohol) and polyvinyl chloride were employed as polymer matrices to construct two composite systems. Utilizing polyvinyl chloride rather than poly(vinyl alcohol) realizes higher comprehensive electrical properties in composites, ascribed to optimization of that synergy. The optimization was achieved based on a combination of mild induced polarization and polarization-assisted electric percolation. Therefore, this work might open the way for large-scale production of high-frequency applicable composite dielectrics with competitive comprehensive electrical properties.

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“…It is also found that the incorporation of impurities hinders the grain growth, and the grain size decreases for an increasing doping concentration. [13,17,22] Combining high nitrogen doping, a rather low F MMS and a reduced d f-s a conductivity of σ = 14 S cm À1 could be achieved by Pomaska. [13] For high doping concentrations, it was not possible to extract an E 04 because α was always above 10 4 cm À1 .…”

Section: Doping In Nanocrystalline Silicon Carbidementioning

confidence: 99%

Material Properties of Nanocrystalline Silicon Carbide for Transparent Passivating Contact Solar Cells

et al. 2023

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Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

Cited by 17 publications

References 48 publications

On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays

On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays

Enhancing High-Frequency Dielectric Properties of Beta-SiC Filled Nanocomposites from Synergy between Percolation and Polarization

Material Properties of Nanocrystalline Silicon Carbide for Transparent Passivating Contact Solar Cells

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