2014
DOI: 10.1063/1.4861377
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Growth modes and epitaxy of FeAl thin films on a-cut sapphire prepared by pulsed laser and ion beam assisted deposition

Abstract: FeAl films around equiatomic composition are grown on a-cut (112¯0) sapphire substrates by ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD) at ambient temperature. Subsequent successive annealing is used to establish chemical order and crystallographic orientation of the films with respect to the substrate. We find a strongly [110]-textured growth for both deposition techniques. Pole figures prove the successful preparation of high quality epitaxial films by PLD with a single in-plane orie… Show more

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Cited by 6 publications
(4 citation statements)
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“…As we know, the effect of ion bombardment during the film growth by IBAD can be described as 'local annealing' effect in the topmost few nm of the film [20]. The ions collide with atoms and surface-near atoms increasing their mobility during deposition.…”
Section: Resultsmentioning
confidence: 99%
“…As we know, the effect of ion bombardment during the film growth by IBAD can be described as 'local annealing' effect in the topmost few nm of the film [20]. The ions collide with atoms and surface-near atoms increasing their mobility during deposition.…”
Section: Resultsmentioning
confidence: 99%
“…[30][31][32] In particular, the PLD technique enables the fabrication of amorphous ferromagnetic materials, nanostructured magnetic films, and a wide range of thin films and multilayered structures. 5,[33][34][35][36][37][38][39][40][41] In previous studies, we demonstrated that oblique PLD (oblique-angle incidence of the plasma during deposition and special geometry) of Co and Co-rich films allowed the generation of a special nano-morphology: we discovered that Cylindrical Symmetry Oblique Growth (CSOG) films were grown, composed of nano-sheets tilted ≈ 60° with respect to the substrate plane, with dimensions of ≈ 3.0-4.0 nm thickness, ≈ 30-100 nm width, and ≈ 200-300 nm length, with an inter-sheet distance of ≈ 0.9-1.5 nm, depending on the element accompanying Co, such as a transition metal V, Zn, and Cu. These nanosheets were oriented perpendicularly to the incidence plane of the plasma during deposition.…”
mentioning
confidence: 99%
“…This distinguishes PLD from conventional thermal evaporation like molecular beam epitaxy (MBE) where the kinetic energy of species is typically between 0.1 and 0.3 eV, and evaporation rates are rather small [3,13]. Even though it has been reported that the energetic species in the plume may induce defect formation, ion implantation, and self-sputtering in particular if the laser fluence is too high [7,[14][15][16], a certain amount of energetic species in the plume are found to be beneficial. Energetic species can promote the adatom mobility on the growing film and, thus, improve the film quality.…”
mentioning
confidence: 99%