Giant magneto-impedance (GMI) effects have been observed in a number of soft magnetic materials [1][2][3][4]. Amorphous Co-Si-B alloy satisfy the requirements for a core materials in GMI sensor because of its superior soft magnetic properties, such as a very low coercivity, much higher permeability, lower saturation field, nearly zero magnetostriction [5][6]. For example, in CoSiB/Cu/CoSiB films of 7 µm thick, the GMI ratio is 340% for a frequency of 10 MHz and a DC magnetic field of 9 Oe [7]. Therefore, thin films of CoSiB alloy are particularly attractive for use in magnetic sensing devices.Usually, magnetron sputtering has been most widely used to produce thin GMI films [8], as it is able to produce multiple
Ba 0:9 Sr 0:1 TiO 3 ceramics with or without ZnO have been prepared by traditional solid state reaction method. The XRD analysis showed that the doped Zn 2þ ions diffused into the BST crystal lattice, resulting in the variation of dielectric properties. Especially the dielectric constant at Curie point decreased with doping ZnO content when it is lower than 0.5 mol%. Due to the promotion of sintering, doping ZnO can enhance the density of ceramics but increase grain size. However, ZnO is a kind of semiconductor and can lead to the decrease in electrical breakdown strength value.
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