2000
DOI: 10.1016/s0022-0248(00)00727-2
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Growth mechanism of selectively grown II–VI semiconductor photonic dots for short-wavelength light emitters

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Cited by 8 publications
(5 citation statements)
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“…There have been many CdS deposition techniques including vacuum evaporation (Grynko et al, 2009), RF sputtering (Akkad and Ashour, 2009), chemical vapor deposition (Jones et al, 2009) and molecular beam epitaxy (Ueta et al, 2000). All these methods require special tools, and therefore their manufacturing cost is high.…”
Section: Introductionmentioning
confidence: 99%
“…There have been many CdS deposition techniques including vacuum evaporation (Grynko et al, 2009), RF sputtering (Akkad and Ashour, 2009), chemical vapor deposition (Jones et al, 2009) and molecular beam epitaxy (Ueta et al, 2000). All these methods require special tools, and therefore their manufacturing cost is high.…”
Section: Introductionmentioning
confidence: 99%
“…1(a). Nine ZnS pyramids with the square bottom sizes of 100-900 nm each separated by 100 nm were selectively grown on the DBR surface with MOMBE [8]. The reflection spectra of the ZnS pyramids were measured with a microreflection measurement set-up with the spatial resolution of ~1 µm.…”
Section: Experimental Study Of Influence Of Zns Pyramids On Dbr Spectramentioning
confidence: 99%
“…Further details on the mask patterning procedures and the selective growth are given in Ref. [9]. Typical AFM image of a selectively grown area reveals a formation of mesa-shaped structure as is illustrated in the inset of Fig.…”
Section: Introductionmentioning
confidence: 99%