Growth Mechanism and Defects of <111>‐Oriented β‐SiC Films Deposited by Laser Chemical Vapor Deposition

Abstract

Two kinds of <111>-oriented b-SiC films with pyramidlike and needlelike morphologies were obtained by laser chemical vapor deposition. Their mean grain size (<d>) as a function of the distance from substrate (h) follows power laws of <d> / h 0.62 and <d> / h 0.71 , respectively. The planar defects in pyramidlike films were perpendicular to the growth direction, whereas those in needlelike b-SiC films inclined to growth direction, which can be annihilated with meeting of anti-couple defect. This self-vanish of defects would develop a new approach to fabricate high quality <111>-oriented b-SiC.G. Brennecka-contributing editor Manuscript No. 34552.

Effect of Pressure on Microstructure of <111>‐Oriented β‐SiC Films: Research via Electron Backscatter Diffraction

“…If the {−1 −1 −1} and {111} planes had a very different growth rate [r{−1 −1 −1}/ r {111}<1/3), the fastest growing direction would be <111>, and the morphology on a substrate would be a triangular pyramid bounded by the {111} planes which is depicted in Fig. (e) . Sixfold symmetry in Fig.…”

“…Moreover, specially, <111>‐oriented β‐SiC is a candidate substrate for the growth of graphene . <111 > ‐oriented β‐SiC naturally accommodates the sixfold symmetry of graphene.…”

“…The much larger surfacial areas (20 μm ×20 μm) of β‐SiC films with thousands of grains were detected. We believe this is in complement to our former TEM investigation, in which cross‐section morphology and planar faults within atomic scale were interesting.…”

High‐speed heteroepitaxial growth of 3C‐SiC (111) thick films on Si (110) by laser chemical vapor deposition

“…Figure 5 b scanning from 0 to 360 o was also conducted with diffraction from {220} planes to confirm the rotated heteroepitaxial growth of 3C-SiC (111) on Si (110) substrate. 40 We studied the thickness and deposition rate (R dep ) of epitaxial 3C-SiC (111) films prepared on Si (110) at T dep from 1573 K to 1648 K. With increasing T dep , the thickness of 3C-SiC films increased from 5.40 to 9.32 lm. The diffraction intensity of epitaxial peaks were equal to DPB peaks from 1573 to 1648 K. With the increasing T dep , FWHM of (220) b scanning peak decreased from 6.8 o to 2.5 o as shown in Figure 6(B), implying the improvement of the crystallization quality of 3C-SiC (111) epitaxial films.…”

Fabrication of columnar structured lanthanum zirconate films by laser CVD

“…Another optional and low‐cost method, laser chemical vapor deposition (LCVD), can produce highly pure and dense coatings with the columnar microstructure, such as YSZ, TiO 2 , β‐SiC, and SiOC, reported by Goto and Tu et al Effect of laser on CVD can be divided into two types: pyrolytic and photolytic LCVD . Normally, photolytic LCVD uses photons from a laser beam to excited electrons and/or break chemical bonds within the reactive gases, while the pyrolytic LCVD uses the energy of a laser beam to heat the surface of a substrate.…”