Growth Kinetics of Palladium Silicides Formed by Rapid Thermal Annealing

Abstract

Palladium silicide false(Pd2normalSifalse) is formed through contact reaction of an electron‐deposited Pd thin film and single‐crystal <100> Si substrate by rapid thermal annealing (RTA). The sample temperatures are carefully measured by both optical pyrometer and thermocouples. The annealed samples are analyzed by four‐point probe measurements, x‐ray diffraction (XRD), scanning electron microscopy (SEM), and scanning Auger microprobe analysis (SAM). Pd2normalSi is the first and only phase detected in the temperature range 310°–460°C. The temperature at which Pd2normalSi starts to form is 320°C, and the activation energy for the diffusion‐controlled silicide growth is found to be 1.4±0.2 normaleV . These results show that the growth mechanism of Pd2normalSi is the same in both rapid thermal annealing and conventional furnace annealing.

Immersion Deposition of Metal Films on Silicon and Germanium Substrates in Supercritical Carbon Dioxide

“…Pd 3d5/2 peak at 336.8 eV and Pd 3d3/2 peak at 342.1 eV can be assigned to Pd 2 Si, , indicating the conversion of Pd to palladium silicide by annealing at 320 °C. This observation is in agreement with the reported formation temperature of 200−400 °C in conventional furnace annealing. , Pd 3d5/2 and Pd 3d3/2 peaks for palladium also appeared around 335.5 and 340.8 eV. That means the silicification had not been completely finished at the outer layer close to the surface of the film.…”

“…For copper films obtained from SFID, the C 1s peak disappeared completely after 3 min of Ar + etching cleaning, indicating that high-purity copper films were produced by the SFID process. Furthermore, it has been reported that annealing treatment accelerates the conversion of metals deposited on silicon to silicides. , As Figure c shows, Si 2s and Si 2p peaks were observed in the survey XPS (Al Kα as excitation) of the same palladium film as in Figure a,b after annealing, implying the formation of silicides. Photoelectron lines were unaffected by the use of different excitations.…”

“…Furthermore, it has been reported that annealing treatment accelerates the conversion of metals deposited on silicon to silicides. 55,56 As Figure 4c shows, Si 2s and Si 2p peaks were observed in the survey XPS (Al KR as excitation) of the same palladium film as in Figure 4a,b after annealing, implying the formation of silicides. Photoelectron lines were unaffected by the use of different excitations.…”

“…This observation is in agreement with the reported formation temperature of 200-400 °C in conventional furnace annealing. 55,56 Pd 3d5/2 and Pd 3d3/2 peaks for palladium also appeared around 335.5 and 340.8 eV. That means the silicification had not been completely finished at the outer layer close to the surface of the film.…”