The open-circuit voltage of MIS solar cells realized on n-type silicon has been investigated. Chemically formed and evaporated SiOx layers have been used for the insulating film. The latter has given the best results on polished samples, since Voc reached 0.55V. The influence of different parameters like n or ΦBn are discussed.
A study to elucidate the role of processing-induced changes in Si, subjected to ion-beam etching has been made. It is shown that these changes can be related to the primary ion beam used in ion-beam etching. Using ESR, trivalently bonded Si has been shown to be present. Fe and Cr have been found to be the main contaminants. An annealing study revealed that the damage can be annealed out at relatively high temperatures.
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