Growth and properties of Al2O3 and SiO2 nanolayers on III–V semiconductors

Ezhovskii, Yu. K.; Kholkin, V. Yu.

doi:10.1134/s0020168510010097

Cited by 4 publications

(2 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…So far, the most used precursors for the chemical vapor deposition of SiO 2 thin films are silane (SiH 4 ) and halogen-containing precursors, such as SiCl 4 , , Si 2 Cl 6 , or SiH 2 Cl 2 because of their ability to provide high-purity films. The fabrication of SiO 2 films using these conventional precursors is often carried out at relatively high temperatures (>400 °C).…”

Section: Introductionmentioning

confidence: 99%

“…The combination of atmospheric plasma generator and the SCVD technique would therefore be particularly beneficial to industrial-scale applications, such as for instance deposition of thin films for solar cells, barrier coatings, or layers for electronic device encapsulation. 31,32 So far, the most used precursors for the chemical vapor deposition of SiO2 thin films are silane (SiH4) and halogencontaining precursors, such as SiCl4 33,34 , Si2Cl6 35 or SiH2Cl2 36 because of their ability to provide high-purity films. The fabrication of SiO2 films using these conventional precursors is often carried out at relatively high temperatures (> 400 °C).…”

mentioning

confidence: 99%

See 1 more Smart Citation

Atmospheric Plasma-Enhanced Spatial Chemical Vapor Deposition of SiO₂ Using Trivinylmethoxysilane and Oxygen Plasma

et al. 2020

View full text Add to dashboard Cite

HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

show abstract

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

Atmospheric Plasma-Enhanced Spatial Chemical Vapor Deposition of SiO₂ Using Trivinylmethoxysilane and Oxygen Plasma

et al. 2020

View full text Add to dashboard Cite

show abstract

Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors

et al. 2014

View full text Add to dashboard Cite

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

Miikkulainen

Leskelä

Ritala

et al. 2013

Journal of Applied Physics

1,292

1,162

View full text Add to dashboard Cite

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas–solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic–organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

show abstract

Growth and properties of Al2O3 and SiO2 nanolayers on III–V semiconductors

Cited by 4 publications

References 2 publications

Atmospheric Plasma-Enhanced Spatial Chemical Vapor Deposition of SiO₂ Using Trivinylmethoxysilane and Oxygen Plasma

Atmospheric Plasma-Enhanced Spatial Chemical Vapor Deposition of SiO₂ Using Trivinylmethoxysilane and Oxygen Plasma

Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

Contact Info

Product

Resources

About

Growth and properties of Al2O3 and SiO2 nanolayers on III–V semiconductors

Cited by 4 publications

References 2 publications

Atmospheric Plasma-Enhanced Spatial Chemical Vapor Deposition of SiO2 Using Trivinylmethoxysilane and Oxygen Plasma

Atmospheric Plasma-Enhanced Spatial Chemical Vapor Deposition of SiO2 Using Trivinylmethoxysilane and Oxygen Plasma

Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

Contact Info

Product

Resources

About

Atmospheric Plasma-Enhanced Spatial Chemical Vapor Deposition of SiO₂ Using Trivinylmethoxysilane and Oxygen Plasma

Atmospheric Plasma-Enhanced Spatial Chemical Vapor Deposition of SiO₂ Using Trivinylmethoxysilane and Oxygen Plasma