Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors

Putkonen, Matti; Bosund, Markus; Ylivaara, Oili; Puurunen, Riikka L.; Kilpi, Lauri; Ronkainen, Helena; Sintonen, Sakari; Ali, Saima; Lipsanen, Harri; Liu, Xuwen; Haimi, Eero; Hannula, Simo Pekka; Sajavaara, Timo; Buchanan, Iain; Karwacki, Eugene J.; Vähä-Nissi, Mika

doi:10.1016/j.tsf.2014.02.087

Cited by 70 publications

(54 citation statements)

References 36 publications

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“…The listed GPC values have been used to calculate the necessary ALD cycles to reach the thicknesses of each layer of the following AR coatings. Growth rates and refractive index of SiO 2 thin films are similar to films grown from other commercially available precursors, as BDEAS, BTBAS and AP-LTO ® 330 [30,31]. Alumina ALD thin films show a lower refractive index at lower deposition temperature [32] owing to a lower density at lower deposition temperatures [26].…”

Section: Characterization Of Ald Thin Filmsmentioning

confidence: 58%

Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition

et al. 2017

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Antireflection (AR) coatings are indispensable in numerous optical applications and are increasingly demanded on highly curved optical components. In this work, optical thin films of SiO 2 , Al 2 O 3 , TiO 2 and Ta 2 O 5 were prepared by atomic layer deposition (ALD), which is based on self-limiting surface reactions leading to a uniform film thickness on arbitrarily shaped surfaces. Al 2 O 3 /TiO 2 /SiO 2 and Al 2 O 3 /Ta 2 O 5 /SiO 2 AR coatings were successfully applied in the 400-750 nm and 400-700 nm spectral range, respectively. Less than 0.6% reflectance with an average of 0.3% has been measured on a fused silica hemispherical (half-ball) lens with 4 mm diameter along the entire lens surface at 0 • angle of incidence. The reflectance on a large B270 aspherical lens with height of 25 mm and diameter of 50 mm decreased to less than 1% with an average reflectance < 0.3%. The results demonstrate that ALD is a promising technology for deposition of uniform optical layers on strongly curved lenses without complex in situ thickness monitoring.

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Section: Characterization Of Ald Thin Filmsmentioning

confidence: 58%

Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition

et al. 2017

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“…137 It has similarly been shown that energetic ions from the plasma activated step in PEALD processes can also be utilized to induce compressive stresses in what are typically tensile films when grown by pure thermal ALD processes. [274][275][276] For the ALD BeO film, we note that the film stress was not measured due to the lack of a wafer curvature measurement instrument in the laboratory housing the BeO ALD system, that is the ALD Al 2 O 3 , HfO 2 , and PEALD AlN growths were performed in separate and geographically remote laboratories.…”

Section: -268mentioning

confidence: 99%

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic devices. While electrical, optical, and interfacial properties have been the primary consideration for such devices, thermal and mechanical properties are becoming an additional key consideration for many new and emerging applications of ALD high-k materials in electromechanical, energy storage, and organic light emitting diode devices. Unfortunately, a clear correspondence between thermal/mechanical and electrical/optical properties in ALD high-k materials has yet to be established, and a detailed comparison to conventional silicon-based dielectrics to facilitate optimal material selection is also lacking. In this regard, we have conducted a comprehensive investigation and review of the thermal, mechanical, electrical, optical, and structural properties for a series of prevalent and emerging ALD high-k materials including aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), hafnium oxide (HfO 2 ), and beryllium oxide (BeO). For comparison, more established silicon-based dielectrics were also examined, including thermally grown silicon dioxide (SiO 2 ) and plasma-enhanced chemically vapor deposited hydrogenated silicon nitride (SiN:H). We find that in addition to exhibiting high values of dielectric permittivity and electrical resistance that exceed those of SiO 2 and SiN:H, the ALD high-k materials exhibit equally exceptional thermal and mechanical properties with coefficients of thermal expansion ≤ 6 × 10 -6 / • C, thermal conductivites (κ) of 3-15 W/m K, and Young's modulus and hardness values exceeding 200 and 25 GPa, respectively. In many cases, the observed extreme thermal/mechanical properties correlate with the presence of crystallinity in the ALD high-k films. In contrast, some of the electrical and optical properties correlate more strongly with the percentage of ionic vs. covalent bonds present in the high-k film. Overall, the ALD high-k dielectrics investigated concurrently exhibit compelling thermal/mechanical and electrical/optical properties. The drive to reduce gate leakage currents in highly scaled complementary metal-oxide-semiconductor (CMOS) transistors has led to the exploration and development of a wide variety of high-dielectricconstant (high-k) materials to replace silicon dioxide (SiO 2 ) as the insulating gate dielectric material.1-8 Many of these same high-k materials have found additional applications in future non-CMOS logic and memory storage products such as solid-state electrolytes in resistive switching devices, 9,10 tunnel barriers in spin-transport devices, 11 and as a ferroelectric in magnetoelectric devices. While electrical, physical, and thermodynamic properties have clearly been a key consideration in all of the above applications, thermal properties have become an additional important consideration for higk-k dielectrics as aggressive dimensional scaling of devices has created the need to dissipate ...

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“…The carbon contamination was approximately at the same level when compared to the previously reported SiO2 layers deposited at 100 o C using PEALD process whereas the hydrogen content was significantly lower. [24] PEALD SiO2 films had a deposition rate ~1.8 Å(cycle) -1 containing around 10-12 at-% of hydrogen when deposited from AP-LTO® 330 + O2 plasma.…”

Section: Resultsmentioning

confidence: 99%

“…In addition, the need for the low temperature processing sets up new challenges in process chemistry as well. [24] For example the low reactivity of ozone hinders the thermal processes below 300 °C in cross-flow ALD tools.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature atomic layer deposition of SiO ₂ /Al ₂ O ₃ multilayer structures constructed on self-standing films of cellulose nanofibrils

Putkonen

Sippola

Svärd

et al. 2017

Phil. Trans. R. Soc. A.

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In this paper, we have optimized a low-temperature atomic layer deposition (ALD) of SiO 2 using AP-LTO® 330 and ozone (O 3 ) as precursors, and demonstrated its suitability to surface-modify temperature-sensitive bio-based films of cellulose nanofibrils (CNFs). The lowest temperature for the thermal ALD process was 80°C when the silicon precursor residence time was increased by the stop-flow mode. The SiO 2 film deposition rate was dependent on the temperature varying within 1.5–2.2 Å cycle −1 in the temperature range of 80–350°C, respectively. The low-temperature SiO 2 process that resulted was combined with the conventional trimethyl aluminium + H 2 O process in order to prepare thin multilayer nanolaminates on self-standing CNF films. One to six stacks of SiO 2 /Al 2 O 3 were deposited on the CNF films, with individual layer thicknesses of 3.7 nm and 2.6 nm, respectively, combined with a 5 nm protective SiO 2 layer as the top layer. The performance of the multilayer hybrid nanolaminate structures was evaluated with respect to the oxygen and water vapour transmission rates. Six stacks of SiO 2 /Al 2 O with a total thickness of approximately 35 nm efficiently prevented oxygen and water molecules from interacting with the CNF film. The oxygen transmission rates analysed at 80% RH decreased from the value for plain CNF film of 130 ml m −2 d −1 to 0.15 ml m −2 d −1 , whereas the water transmission rates lowered from 630 ± 50 g m −2 d −1 down to 90 ± 40 g m −2 d −1 . This article is part of a discussion meeting issue ‘New horizons for cellulose nanotechnology’.

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Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors

Cited by 70 publications

References 36 publications

Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition

Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Low-temperature atomic layer deposition of SiO ₂ /Al ₂ O ₃ multilayer structures constructed on self-standing films of cellulose nanofibrils

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Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors

Cited by 70 publications

References 36 publications

Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition

Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Low-temperature atomic layer deposition of SiO 2 /Al 2 O 3 multilayer structures constructed on self-standing films of cellulose nanofibrils

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Low-temperature atomic layer deposition of SiO ₂ /Al ₂ O ₃ multilayer structures constructed on self-standing films of cellulose nanofibrils