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The atomic layer deposition (ALD) of AlN from AlCl 3 was investigated using a thermal process with NH 3 and a plasma-enhanced (PE)ALD process with Ar/NH 3 plasma. The growth was limited in the thermal process by the low reactivity of NH 3 , and impractically long pulses were required to reach saturation. Despite the plasma activation, the growth per cycle in the PEALD process was lower than that in the thermal process (0.4 Å vs 0.7 Å). However, the plasma process resulted in a lower concentration of impurities in the films compared to the thermal process. Both the thermal and plasma processes yielded crystalline films; however, the degree of crystallinity was higher in the plasma process. The films had a preferential orientation of the hexagonal AlN [002] direction normal to the silicon (100) wafer surface. With the plasma process, film stress control was possible and tensile, compressive, or zero stress films were obtained by simply adjusting the plasma time.
We report the effect of plasma parameters on the properties of ultrathin Al 2 O 3 films prepared by plasma enhanced atomic layer deposition for moisture barrier applications. The Al 2 O 3 films were grown at 90 °C using trimethylaluminum and O 2 plasma as precursors. Plasma power, exposure time and O 2 concentration are found to influence the growth behavior, composition and density of ultrathin Al 2 O 3 films. Plasma power ; 100 W leads to lower impurity levels and higher mass densities of >2.85 g&cm %3 . The optimum plasma parameters for our process, a plasma power of 100 W and an exposure time of 3 s, reveal a good water vapor transmission rate of 5 ' 10 %3 g&m %2 &day %1 for polyethylene naphthalate substrates coated with 4 nm-thick Al 2 O 3 films.
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