Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate

Abstract

GaN/InGaN based violet light emitting diodes (LEDs), emitting at 430 nm, have been grown on conventional single side polished (SSP) and patterned sapphire substrates (PSS). Characteristics of the epitaxial wafers and subsequently fabricated LEDs have been analyzed. The photoluminescence (PL) peaks have been observed at 428.1 nm 426.1 nm for the epitaxial layers on SSP and PSS respectively. The PL intensity is 2.9 times higher in the case of PSS. The electroluminescence (EL) peaks have been observed at 430.78 nm and 430.35 nm for the LEDs on SSP and PSS respectively. The light output from LED fabricated on the PSS is 2.15 times higher than that of the LED on SSP at a forward current of 100 mA.

Exciton binding energy in coupled double zinc blende GaN/InGaN quantum well

“…The large energy gap of nitride semiconductors is used for optoelectronic purposes. Especially the InGaN alloy is suitable for light emitter diode into the blue , green , yellow , amber , and violet range. Lasers and solar cells also are possible device applications .…”