Design and Fabrication of Multi Quantum well based GaN/InGaN Blue LED

Meel, Krishna; Mahala, Pramila; Singh, Sumitra

doi:10.1088/1757-899x/331/1/012008

Cited by 11 publications

(5 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Compared with the p-i-n structure, the MQW uses a stack of semiconductor layers for the purpose of trapping charge. For example, applying multiple stacks of structures of GaN/In x Ga 1-x N between p-GaN and n-GaN [16] can further enhance the trapping effects of charge carriers and therefore can further increase the IQE.…”

Section: Trapping the Charge Carries Using Quantum Wellsmentioning

confidence: 99%

Developments for enhancing the luminous intensity of LEDs by optimizing their structures

Liu

2022

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

The brightness enhancement of the light emitting diode (LED) can satisfy the increasing demands of illumination of human beings. However, the low-rate recombination of electron-hole pairs, isotropic nature of the spontaneous emission as well as the large refractive index of the materials used for LEDs usually limits the performance of the light output. Therefore, it is necessary to address these challenges, trying to enlarge the light output power with high optoelectronic efficiency. This review will analysis the factors that can influence the behaviour of the LEDs and the method to overcome these issues by optimizing the structures of epilayers and LED chips.

show abstract

Section: Trapping the Charge Carries Using Quantum Wellsmentioning

confidence: 99%

Developments for enhancing the luminous intensity of LEDs by optimizing their structures

Liu

2022

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

show abstract

“…In another paper, the structure optimization of the multi-quantum well based Light Emitting Diode (LED) was presented. In there, the electrical and optical properties of the device on several factors such as well width, barrier width, the number of quantum wells were investigated by authors [4]. Room-temperature photoluminescence (PL) measurements are performed on the GaInN/GaN multiple-quantum-well heterostructures grown on GaN-on-sapphire templates with different threading-dislocation densities in [5].…”

Section: Introductionmentioning

confidence: 99%

Wavelength tune of InGaN based blue LEDs by changing indium percentage and operational voltage variables

GECER

Kıyak

2022

Balkan Journal of Electrical and Computer Engineering

View full text Add to dashboard Cite

Abstract— blue light-emitting-diodes (LEDs) are special and different then the other LEDs due to their high-efficient lighting. They have large badgap energy. So gallium nitrides are mostly used during designing blue light. This application focus on the emission properties of a InGaN LED. The emission intensity, energy diagram, spectrum, and efficiency are calculated for an applied voltage. The indium and GaN composition in the blue LED can be varied to control the emission wavelength. In here, composition of InGaN and operational voltage values were varied to control wavelength. Effects of the different InGaN composition and different voltage values were given in results as comperehansively for 5 different simulations. This study is dissimalar than other wevelength studies due to used original parameter values and wavelength compared methods for many situations about InGaN percentage and volatage values. As a result of simulations, we can infer that the high In_x percentage in composition and high voltage makes wavelength gap of an blue LED larger.

show abstract

“…With a methodology based on stress management on underlying GaN-based epitaxial films, the authors demonstrated numerically and experimentally that the optimal tensile stress can increase by over 100% in comparison to the LEDs with compressive stresses [15] . Involving a simple high-quality AlN/Al-GaN buffer template on sapphire substrate which allows a remarkable improvement in the output power of 340 nm-band quaternary InAlGaN-based UV-LEDs, however a maximum output power of 7.1 mW was reached and the authors found that the crystalline quality of the AlN/AlGaN templates strongly affects the output power of UV-LEDs [14] .…”

Section: Introductionmentioning

confidence: 99%

“…For Al x Ga 1-x N and B x Ga 1-x N, the parameters are calculated using the Vegard law [29] . For carrier recombination, both Shockley-Read-Hall (SRH) and Auger recombination are defined by formulas [30,15] ; the SRH and Auger recombination coefficients are 1 × 10 17 s −1 and 1 × 10 −34 cm 6 /s, respectively [15] ; effective densities of states in the conduction band N c are 3 × 10 18 cm −3 and 2.35 × 10 18 cm −3 , respectively; effective densities of states in the valence band N v are 1.4 × 10 19 and 4.6 × 10 19 cm −3 , respectively. Carrier mobilities for AlGaN are μ n = 860 cm 2 /(V•s), and μ p = 283 cm 2 /(V•s), respectively; for BGaN μ n = 992 cm 2 /(V•s), and μ p = 351 cm 2 /Vs, respectively.…”

Section: Introductionmentioning

confidence: 99%

Numerical simulation of UV LEDs with GaN and BGaN single quantum well

Belaïd

Hamdoune

2019

J. Semicond.

View full text Add to dashboard Cite

The objective of this work is to simulate a single quantum well ultraviolet light emitting diode (LED) based on AlGaN/GaN/AlGaN and AlGaN/BGaN/AlGaN, by using TCAD Silvaco simulator. The first structure has a GaN quantum well taken between two layers, of n-AlGaN and p-AlGaN. The second one has a BGaN quantum well instead of GaN. We fix the concentration of the boron in BGaN to only 1% and we vary the thickness of GaN and BGaN quantum well layer from 7 to 20 nm, for the two structures. As results, we obtain respectively for GaN-LED and BGaN-LED, a maximum current of 0.52 and 0.27 mA, a maximum power spectral density of 1.935 and 6.7 W cm−1 eV−1, a maximum spontaneous emission of 3.34 × 1028 and 3.43 × 1028 s−1 cm−3 eV−1, and a maximum Light output power of 0.56 and 0.89 mW.

show abstract

Design and Fabrication of Multi Quantum well based GaN/InGaN Blue LED

Cited by 11 publications

References 7 publications

Developments for enhancing the luminous intensity of LEDs by optimizing their structures

Developments for enhancing the luminous intensity of LEDs by optimizing their structures

Wavelength tune of InGaN based blue LEDs by changing indium percentage and operational voltage variables

Numerical simulation of UV LEDs with GaN and BGaN single quantum well

Contact Info

Product

Resources

About