Growth and doping of InGaAsP/InP by liquid-phase epitaxy

Fiedler, F.; Wehmann, H.-H.; Schlachetzki, A.

doi:10.1016/0022-0248(86)90245-9

Cited by 17 publications

(2 citation statements)

References 41 publications

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“…11 and 12). In spite of the QA holediffusion length &(&A) = (,uhZminkT/e)'12 = (2 to 9) pm (ph = (40 to 150) cmz/Vs [15] and values Zmin = (40 to 200) ns taken from the present work no light emission is observed from the 1 = 1.1 pm-Q, layer because this layer is inefficient (no CL intensity) and the hetero-barrier hinders partly the hole entrance into this Q1 layer. On the other hand, there is a very weak injection of highly moving electrons (,un(InP; 300 K) = 4000 cmZ/Vs [16]) into the Cd-doped InP buffer layer, which generates the small InP emission at 1 < 1 pm (process "b" in Fig.…”

Section: Discussionmentioning

confidence: 99%

Minority-carrier generation and recombination in 1.35 μm InGaAsP/InP double heterostructure diodes

Rheinländer

Grummt

Kováč³

et al. 1988

Phys. Stat. Sol. (a)

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In 1.35 μm‐InGaAsP/InP DHS mesastructure diodes with differently spaced p‐n and heterojunctions the electron‐beam induced current and cathodoluminescence, the C–U characteristics, the DLTS, and the photoresponse as well as the injection luminescence as functions of the wavelength, temperature, and time are measured. The InP‐interlayer lying between p‐n and heterojunction supresses the collection of the photogenerated holes by means of the valence‐band offset induced pile‐up effect at low illumination levels and low temperatures, delays the motion of the holes during the collection at high illumination levels and reduces the hole injection into the n‐type quaternary active layer at low temperatures. Probably due to the separation of the p‐n junction from the active layer the content of nonradiative recombination centres in the active layer is reduced.

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Section: Discussionmentioning

confidence: 99%

Minority-carrier generation and recombination in 1.35 μm InGaAsP/InP double heterostructure diodes

Rheinländer

Grummt

Kováč³

et al. 1988

Phys. Stat. Sol. (a)

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show abstract

“…Only in heavily Sn-doped LPE layers Sn has clustered or precipitated during growth and upon cooling from the growth temperature. In the case of LPE, the Sn distribution coefficient is shown to be rather small (1.55 Â 10 À 3 for T¼617 1C [16] and 1.4 Â 10 À 3 for T¼636 1C [17]) and almost independent on the composition of the InGaAs solid solution during crystallization process. Since the Sn concentrations in the liquid in this study are in the range 0.1-0.5 at% the concentrations of Sn atoms in the grown films are estimated to be lower than 4 Â 10 17 cm À 3 .…”

Section: Sn-doped Ingaasn Layersmentioning

confidence: 99%