Structural and electrical characteristics of InGaAsN layers grown by LPE

Milanova, M.; Vitanov, P.; Terziyska, P.; Popov, G.; Koleva, G.

doi:10.1016/j.jcrysgro.2012.02.021

Cited by 10 publications

(1 citation statement)

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“…This allows obtaining thick layers of high quality material in terms of lifetime, mobility and freedom from defects, suitable for solar cell applications. In spite of this there have been few reports on Ga(In)AsN layers grown by LPE [20][21][22][23][24] and even fewer for the LPE-grown pentanary compound InGaAsSbN [25]. Therefore, it is important to study such materials by various complementary experimental techniques.…”

Section: Introductionmentioning

confidence: 99%

Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy

Milanova

Asenova

Shtinkov

et al. 2018

Journal of Crystal Growth

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Dilute nitride InGaAsSbN layers grown by low-temperature liquid phase epitaxy are studied in comparison with quaternary InGaAsN layers grown at the same growth conditions to understand the effect of Sb in the alloy. The lattice mismatch to the GaAs substrate is found to be slightly larger for the InGaAsNSb layers, which is explained by the large atomic radius of Sb. A reduction of the band gap energy with respect to InGaAsN is demonstrated by means of photoluminescence (PL), surface photovoltage (SPV) spectroscopy and tight-binding calculations. The band-gap energies determined from PL and ellipsometry measurements are in good agreement, while the SPV spectroscopy and the tight-binding calculations provide lower values. Possible reasons for these discrepancies are discussed. The PL spectra reveal localized electronic states in the band gap near the conduction band edge, which is confirmed by SPV spectroscopy. The analysis of the power dependence of the integrated PL has allowed determining the dominant radiative recombination mechanisms in the layers. The values of the refraction index in a wide spectral region are found to be higher for the Sb containing layers.

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