Liquid phase epitaxy

Kuphal, E.

doi:10.1007/bf00323650

Cited by 84 publications

(19 citation statements)

References 106 publications

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“…The LPE technique is used widely for the growth of high quality crystalline layers, for which it is ideally suited, owing to its near-equilibrium nature. The technique has been successfully applied to the growth of single crystal III-V growth, notably GaAs and its alloys [7]. A number of issues immediately preclude conventional CuCl LPE growth, however.…”

mentioning

confidence: 99%

UV emission on a Si substrate: Optical and structural properties of γ‐CuCl on Si grown using liquid phase epitaxy techniques

Cowley

Foy

Danilieuk

et al. 2009

Physica Status Solidi (a)

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Considerable research is being carried out in the area of wide band gap semiconductor materials for light emission in the 300–400 nm spectral range. Current materials being used for such devices are typically based on II–VI and III‐nitride compounds and variants thereof. However, one of the major obstacles to the successful fabrication of III‐N devices is lattice mismatch‐induced high dislocation densities for epitaxially grown layers on non‐native substrates. γ‐CuCl is a direct bandgap material and an ionic wide bandgap I–VII semiconductor with a room temperature free exciton binding energy of ∼190 meV (compared to ∼25 meV and ∼60 meV for GaN and ZnO, respectively) and has a band gap of 3.4 eV (λ ∼ 366 nm). The lattice constant of γ‐CuCl (0.541 nm) is closely matched to that of Si (0.543 nm). This could, in principle, lead to the development of optoelectronic systems based on CuCl grown on Si. Research towards this end has successfully yielded polycrystalline γ‐CuCl on Si(100) and Si(111) using vacuum‐based deposition techniques [1]. We report on developments towards achieving single crystal growth of CuCl from solution via Liquid Phase Epitaxy (LPE) based techniques. Work is being carried out using alkali halide flux compounds to depress the liquidus temperature of the CuCl below its solid phase wurtzite‐zincblende transition temperature (407 °C [2]) for solution based epitaxy on Si substrates. Initial results show that the resulting KCl flux‐driven deposition of CuCl onto the Si substrate has yielded superior photoluminescence (PL) and X‐ray excited optical luminescence (XEOL) behavior relative to comparitively observed spectra for GaN or polycrystalline CuCl. This enhancement is believed to be caused by an interaction between the KCl and CuCl material subsequent to the deposition process, perhaps involving a reduction in Cl vacancy distributions in CuCl. This paper presents a detailed discussion of a CuCl LPE growth system as well as the characterization of deposited materials using X‐ray diffraction (XRD), room temperature and low temperature PL, and XEOL. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 99%

UV emission on a Si substrate: Optical and structural properties of γ‐CuCl on Si grown using liquid phase epitaxy techniques

Cowley

Foy

Danilieuk

et al. 2009

Physica Status Solidi (a)

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“…This design reduces temperature variations around the perimeter of the substrate which contribute to unwanted 'edge' growth effects. Slide boats with narrowed melt contact for epitaxy of extremely thin epilayers have been used to grow active layer in single-quantum well lasers by (Alferov et al, 1985 ) and later by (Kuphal, 1991). Also a modified slide boat can be used for multilayer periodic structures growth (Arsent'ev et al, 1988).…”

Section: T H I S M E T H O D I S V E R Y U S E F U L F O R G R O W T mentioning

confidence: 99%

Dilute Nitride GaAsN and InGaAsN Layers Grown by Low-Temperature Liquid-Phase Epitaxy

Milanova¹,

Vitanov²

2011

Solar Cells - New Aspects and Solutions

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“…This has been a matter of discussion in several reports [14,[18][19][20]. This has been a matter of discussion in several reports [14,[18][19][20].…”

Section: Zmentioning

confidence: 99%

Concentration profile and growth rate studies of In1 ? x Ga x P LPE by computer simulation technique

Dizaji

Dhanasekaran

1996

J Mater Sci: Mater Electron

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Numerical simulation has been used to construct the concentration profiles of Ga and P atoms in In-rich melt at successive equally spaced layers in front of an InGaP crystal growing under normal conditions of liquid phase epitaxy (LPE). The growth rate has been calculated using the concentration gradient at the interface. The composition and the thickness of the InGaP solid grown as a function of growth parameters, such as cooling rate, system temperature and time, have been studied. It is observed that the thickness grown depends on the cooling rate, whereas the solid composition is independent of the cooling rate. The theoretical findings of our model have been compared with experimentally reported values and the results are discussed in detail.

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Liquid phase epitaxy

Cited by 84 publications

References 106 publications

UV emission on a Si substrate: Optical and structural properties of γ‐CuCl on Si grown using liquid phase epitaxy techniques

UV emission on a Si substrate: Optical and structural properties of γ‐CuCl on Si grown using liquid phase epitaxy techniques

Dilute Nitride GaAsN and InGaAsN Layers Grown by Low-Temperature Liquid-Phase Epitaxy

Concentration profile and growth rate studies of In1 ? x Ga x P LPE by computer simulation technique

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