Concentration profile and growth rate studies of In1 ? x Ga x P LPE by computer simulation technique

Abstract

Numerical simulation has been used to construct the concentration profiles of Ga and P atoms in In-rich melt at successive equally spaced layers in front of an InGaP crystal growing under normal conditions of liquid phase epitaxy (LPE). The growth rate has been calculated using the concentration gradient at the interface. The composition and the thickness of the InGaP solid grown as a function of growth parameters, such as cooling rate, system temperature and time, have been studied. It is observed that the thickness grown depends on the cooling rate, whereas the solid composition is independent of the cooling rate. The theoretical findings of our model have been compared with experimentally reported values and the results are discussed in detail.

Simulation of dissolution of silicon in an indium solution by spectral methods

“…Liquid-phase epitaxy (LPE), which consists of depositing thin layers of crystalline material from a solution onto a substrate, has been extensively studied and used for many device fabrications [1,2]. There are a number of studies reported in the literature which assume that the LPE growth process is limited by diffusion [3][4][5][6][7][8]. The results of such studies are not necessarily valid in the presence of convection [9,10].…”