Growth and defects of GaAs and InGaAs films on porous GaAs substrates

Buzynin, A. N.; Buzynin, Yury N.; Belyaev, Alexander; Luk’yanov, A. E.; Рау, Э. И.

doi:10.1016/j.tsf.2006.07.175

Cited by 12 publications

(6 citation statements)

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“…Comparative studies of density and electric activity of structural defects in GaN epitaxial films grown on GaAs substrates with various buffer layers were carried out by an induced bias technique (IBT). The technique has been developed rather recently [27,28]. It is a contact-free similarity of the induced current technique (EBIC-mode).…”

Section: Electrically Active Defects In Gan Films On Gaasmentioning

confidence: 99%

“…GaAs Substrates. In recent years, a considerable attention was drawn to fianite films on silicon due to its electric and optic device applications, such as insulating layers in SOI (silicon-on-insulator) devices [29], gate dielectric in Si- [28,29], SiGe- [30], and A III B V -based [31] device structures, buffer layers for production of optic coatings for films of various semiconductors [30][31][32][33], superconductors [34][35][36], ferroelectrics.…”

Section: Techniques For Deposition Of Fianite Films On Si Andmentioning

confidence: 99%

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Applications of Fianite in Electronics

Buzynin

Panov

2012

Advances in OptoElectronics

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Fianite or yttrium stabilized zirconia (YSZ) solid solutions single crystals were known worldwide as jewelry material. The review is devoted to novel applications of the material in the field of microelectronics. A number of modern aspects of the application of fianite in micro-, opto- and SHF-electronics were analyzed in this paper. It was demonstrated that fianite is an extremely promising multipurpose material for new electronic technologies due to unique combination of physical and chemical properties. As a substrate and buffer layer for the epitaxy of Si, Ge, GeSi and AIIIBVcompounds (GaAs, InGaAs, GaSb, InAs, GaN, AlN), fianite has a number of advantages over the other dielectric materials. The use of fianite (as well as ZrO2and HfO2oxides) instead of SiO2as gate dielectrics in CMOC technology seems to be of peculiar interest. The unique properties of fianite as protecting, stabilizing and antireflecting coatings in electronics and optoelectronic devices have been outlined. A comparative study of the performance characteristics of fianite and conventional materials has been carried out.

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Section: Electrically Active Defects In Gan Films On Gaasmentioning

confidence: 99%

Section: Techniques For Deposition Of Fianite Films On Si Andmentioning

confidence: 99%

Applications of Fianite in Electronics

Buzynin

Panov

2012

Advances in OptoElectronics

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“…SOI substrates with diameters up to 300 mm were fabricated using this process (117). However, in spite of the demonstration of anodization-induced pore formation in many CS materials (118) and the growth of good-quality epitaxial layers on porous CSs (119), studies of the feasibility of this process of thin-layer transfer for CSs are absent in the literature.…”

Section: Layer Transfer By Mechanical Lateral Cleavingmentioning

confidence: 99%

Heterogeneous Integration of Compound Semiconductors

Moutanabbir

Gösele

2010

Annu. Rev. Mater. Res.

139

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The ability to tailor compound semiconductors and to integrate them onto foreign substrates can lead to superior or novel functionalities with a potential impact on various areas in electronics, optoelectronics, spintronics, biosensing, and photovoltaics. This review provides a brief description of different approaches to achieve this heterogeneous integration, with an emphasis on the ion-cut process, also known commercially as the Smart-Cut TM process. This process combines semiconductor wafer bonding and undercutting using defect engineering by light ion implantation. Bulk-quality heterostructures frequently unattainable by direct epitaxial growth can be produced, provided that a list of technical criteria is fulfilled, thus offering an additional degree of freedom in the design and fabrication of heterogeneous and flexible devices. Ion cutting is a generic process that can be employed to split and transfer fine monocrystalline layers from various crystals. Materials and engineering issues as well as our current understanding of the underlying physics involved in its application to cleaving thin layers from freestanding GaN, InP, and GaAs wafers are presented.

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“…Induced bias (IBT) technique has been developed rather recently [30,31]. It is contact-free similarity of induced current technique (EBICmode).…”

Section: Electrically Active Defects In Gan Films On Gaas Substrates mentioning

confidence: 99%