Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors 1997
DOI: 10.1109/iscs.1998.711603
|View full text |Cite
|
Sign up to set email alerts
|

Growth and characterization of thick epitaxial GaAs layers

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2001
2001
2001
2001

Publication Types

Select...
1

Relationship

1
0

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 4 publications
0
1
0
Order By: Relevance
“…Since it has been previously demonstrated that high performances detectors can be obtained with epitaxial layers, we examine here if the new layers we produce, in large quantity, at the desired thickness, and having electronic properties similar to that of the previously used layers [12], could make detectors with similar performances.…”
Section: Introductionmentioning
confidence: 99%
“…Since it has been previously demonstrated that high performances detectors can be obtained with epitaxial layers, we examine here if the new layers we produce, in large quantity, at the desired thickness, and having electronic properties similar to that of the previously used layers [12], could make detectors with similar performances.…”
Section: Introductionmentioning
confidence: 99%