Growth and characterization of self-assembled Ge-rich islands on Si

Abstreiter, G.; Schittenhelm, P.; Engel, C.; Silveira, Eduardo; Zrenner, A.; Meertens, D.; Jäger, W.

doi:10.1088/0268-1242/11/11s/012

Cited by 200 publications

(86 citation statements)

References 22 publications

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“…[18][19][20][21][22][23][24][25][26] More recently Raman spectroscopy has been used extensively to study also nanowires and quantum dots. 27,28 Several phenomena have been reported to date with respect to one-dimensional structures. Polarization dependent confocal Raman spectroscopy on single carbon nanotubes and/or nanowires indicates that the physics behind Raman scattering of such one-dimensional nanostructures can differ significantly from the bulk.…”

Section: Introductionmentioning

confidence: 99%

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects

et al. 2009

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Polarization-dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In the case of zinc-blende, the transversal optical mode E 1 ͑TO͒ at 267 cm −1 exhibits the highest intensity when the incident and analyzed polarization are parallel to the nanowire axis. This is a consequence of the nanowire geometry and dielectric mismatch with the environment, and in quite good agreement with the Raman selection rules. We also find a consistent splitting of 1 cm −1 of the E 1 ͑TO͒. The transversal optical mode related to the wurtzite structure, E 2 H , is measured between 254 and 256 cm −1 , depending on the wurtzite content. The azimuthal dependence of E 2 H indicates that the mode is excited with the highest efficiency when the incident and analyzed polarization are perpendicular to the nanowire axis, in agreement with the selection rules. The presence of strain between wurtzite and zinc-blende is analyzed by the relative shift of the E 1 ͑TO͒ and E 2 H modes. Finally, the influence of the surface roughness in the intensity of the longitudinal optical mode on ͕110͖ facets is presented.

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Section: Introductionmentioning

confidence: 99%

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects

et al. 2009

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“…These results show a very peculiar behavior of mean dot density and size: the first one increases while the second one decreases as a function of increasing growth temperature. Both quantities have the opposite behavior from that observed for selfassembled dots grown under the SK mode [9][10][11]. The QD size distributions for the samples shown in Fig.…”

Section: Introductionmentioning

confidence: 75%

Volmer-Weber growth of CdTe on silicon: a one-dimension Monte Carlo model

Ferreira

2006

Braz. J. Phys.

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In the last few years intense efforts have been devoted to the growth and characterization of semiconductor nanostrucutures. In particular, quantum dots of CdTe grown by hot wall epitaxy on Si(111) substrates constitute a very interesting example. CdTe/Si systems follow the Volmer-Weber growth mode with nucleation of 3D CdTe islands on the Si substrate even for less than one monolayer of evaporated material. In the present work, we proposed a simple one-dimension model to reproduce a very peculiar behavior observed in the quantum dot height and size distributions at distinct temperatures. The model, which includes CdTe deposition, diffusion, and revaporization, qualitatively reproduces these distributions. Moreover, the width distributions suggest a transition from Stranski-Krastanow growth mode at lower temperatures to Volmer-Weber growth mode at higher temperatures.

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“…[1][2][3] Quantum confinement effect in these islands is useful for optoelectronic device applications based on the Si technology. [3][4][5][6][7][8][9][10][11][12][13][14][15] The homoepitaxial Si/Si growth is also important because isotopically controlled Si structures are expected to serve as building blocks of novel application devices, such as a quantum computer utilizing Si nuclear spin. 16 Himpsel and co-workers have experimentally demonstrated that vicinal Si͑111͒ surfaces can serve as templates for self-assembly of one-dimensional ͑1D͒ nanostructures, 17,18 because a regular array of straight steps can be obtained on these surfaces.…”

Section: Introductionmentioning

confidence: 99%

Self-assembly of periodic nanoclusters of Si and Ge along atomically straight steps of a vicinal Si(111)

Sekiguchi

Yoshida

Shiren

et al. 2007

Journal of Applied Physics

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The very initial stage of the molecular beam epitaxy of Si and Ge on Si͑111͒ −7ϫ 7 substrates with atomically straight steps has been studied by scanning tunneling microscopy and spectroscopy. The atomically straight steps have been prepared on a miscut Si͑111͒ substrate by annealing at 830°C with kink-up direct current. The length of the steps can be maximized by selecting a proper annealing time. The steps have a well-defined U͑2, 0͒ step-edge structure. The growth of both Si and Ge at temperatures between 250 and 400°C starts with formation of a single-adatom-row nanowire ͑0.67 nm in width͒ along the lower edge of each U͑2, 0͒ step. Subsequent growth of Si and Ge at temperatures between 250 and 300°C results in formation of one-dimensional arrays of nanoclusters ͑less than 2.0 nm in width͒ in the unfaulted halves of the 7 ϫ 7 structure along the upper step edges. Scanning tunneling spectroscopy reveals localized electronic states of the nanoclusters. Differences between the growth of Si and Ge nanoclusters are discussed.

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Growth and characterization of self-assembled Ge-rich islands on Si

Cited by 200 publications

References 22 publications

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects

Volmer-Weber growth of CdTe on silicon: a one-dimension Monte Carlo model

Self-assembly of periodic nanoclusters of Si and Ge along atomically straight steps of a vicinal Si(111)

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