Volmer-Weber growth of CdTe on silicon: a one-dimension Monte Carlo model

Abstract

In the last few years intense efforts have been devoted to the growth and characterization of semiconductor nanostrucutures. In particular, quantum dots of CdTe grown by hot wall epitaxy on Si(111) substrates constitute a very interesting example. CdTe/Si systems follow the Volmer-Weber growth mode with nucleation of 3D CdTe islands on the Si substrate even for less than one monolayer of evaporated material. In the present work, we proposed a simple one-dimension model to reproduce a very peculiar behavior observed in the quantum dot height and size distributions at distinct temperatures. The model, which includes CdTe deposition, diffusion, and revaporization, qualitatively reproduces these distributions. Moreover, the width distributions suggest a transition from Stranski-Krastanow growth mode at lower temperatures to Volmer-Weber growth mode at higher temperatures.

Reconciled Nanoarchitecture with Overlapped 2 D Anatomy for High‐Energy Hybrid Supercapacitors

“…The morphology of the material suggests that the formation of VS 2 may follow the Volmer–Weber mode, during which the precursors are populated and anchored to the S sites on SG, and over time this leads to the formation of small nanoparticles of VS 2 . The particles grow laterally until they eventually coalesce to form continuous sheets of 2 D VS 2 , on top of which remains some particles that grow perpendicular to the plane of the 2 D sheets of VS 2 as separate islands –. This growth mode has a number of advantages.…”