Growth and Characterization of Polycrystalline Silicon

Rai‐Choudhury, P.; Hower, P.L.

doi:10.1149/1.2403359

Cited by 134 publications

(39 citation statements)

References 14 publications

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“…In the case of SnO2:Sb films, the growth rate passes through a minimum at a molar ratio of 0.15. Catalytic effects of dopants on the growth rate of semiconductors have already been reported (14,15). For example, B2H, increases the growth rate of Si deposited by pyrolysis of Sill,, but AsH3 acts as a catalytic poison by impeding the adsorption of silane on the growing film.…”

Section: Resultsmentioning

confidence: 95%

Thickness Dependence of Transport Properties of Doped Polycrystalline Tin Oxide Films

Bélanger

Dodelet

Lombos

et al. 1985

J. Electrochem. Soc.

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Tin oxide films were deposited by chemical vapor deposition on borosilicate and fused silica substrates using dibutyltin diacetate (DBTD) as tin feedstock and SbC]5 or CC13-CF3 as dopants. The film growth rate was measured as a function of dopant/DBTD ratio, temperature, and film thickness. Scanning electron microscopy and x-ray diffraction spectra of the films were used to determine the grain sizes and the preferential orientations of the crystallites in the film as a function of film thickness. Optical and electrical properties were measured. A model is proposed to elucidate the variation of transport properties of doped SnO2 as a function of film thickness. It could be shown with this model that the thickness dependence of the conductivity of doped SnO2:Sb and SnO2:F films could be analyzed in terms of carrier concentration taking into consideration deep-level compensation. The number of carriers is decreased by electron trapping at Sb(III) or Sn(II) surface states when antimony or fluorine are used as dopant, respectively. The model based on results of the literature related to a single crystal with (110) orientation is extended in this work to other crystallite orientations. The present analysis indicates that deep levels appear only on the grain boundary surfaces with (110), (211), and (301) orientations, and not on the (200) and (400) ones. The concentration of free carriers can be calculated on the basis of x-ray diffraction spectra indicating an estimate of the relative fraction of the crystallites with each orientation as a function of the film thickness. The conductivities of the films can be computed using this model and taking a single value for the electron mobility of 19 cm 2 (V-s) -1 for all film thicknesses and a total donor concentration of 2 • 102~ cm -3. All the obtained experimental data can be accounted for exclusively on the basis of film-thicknessdependent carrier concentration.

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Section: Resultsmentioning

confidence: 95%

Thickness Dependence of Transport Properties of Doped Polycrystalline Tin Oxide Films

Bélanger

Dodelet

Lombos

et al. 1985

J. Electrochem. Soc.

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“…(14) shown by Craig. The number of As atoms (np) incorporated in polySi per square centimeter per second is np= VCAs [6] where v 'is the deposition rate of poly-Si. In the steady-state condition (nw = np), combining Eq.…”

Section: [I]mentioning

confidence: 99%

“…In the steady-state condition (nw = np), combining Eq. [3] and [6] =(nl --nD= VCAs [7] This equation means that, at v --0, nl is equal to n2, i.e. PAsH3 (i) '--PAs (s) -~ 2PAs2 (s) ~-4PAs4 (s) [8] Therefore, from the calculation of Eq.…”

Section: [I]mentioning

confidence: 99%

Arsenic Doping of Chemical Vapor Deposited Polycrystalline Silicon Using SiH4 ‐ H 2 ‐ AsH3 Gas System

Murota

Arai

Kudo

1980

J. Electrochem. Soc.

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The arsenic concentration (CAs) in polycrystalline silicon (poly-Si) deposited under various deposition conditions in the deposition temperature range 670~176 using SiH4-H2-AsH3 gas system has been determined by neutron activation analysis. From the experimental results, it was found that CAs increases with decreasing deposition temperature and with increasing partial pressure of AsH3 in the gas introduced into the reactor (PAsH3Ci)), and that for lower PAsH3 (i) region, CAs decreases with decreasing gas velocity and with increasing deposition rate, and for higher PAsH3(i) region, CAs is independent of gas velocity and deposition rate. From the analyses of the experimental data, it was suggested that (i) for lower PAsHS(i) region, CAs is limited by the diffusion of As-containing species, such as As molecule, As2 molecule, and A~4 molecule, in the stagnant layer formed by gas stream, and for higher PAsH.~ (i~ region, gAs is controlled by the surface reaction; (ii) monatomic As existing at wafer surface is incorporated in poly-Si in accordance with Henry's law;(iii) the transfer coefficient of As atoms in gas phase increases slightly with increasing deposition temperature and gas velocity; (iv) the segregation coefficient of monatomic As between gas phase and poly-Si (m) is approximated by m = 1.5 • l0 s exp (--71.5 kcal/mole/RT); (v) the energy of As-Si bond is 44.5 kcal/mole. Arsenic-doped polycrystalline silicon (As-doped poly-Si) is an important material as a diffusion source for the emitters of microwave transistors (1, 2) and as a gate electrode of MOSLSI's (3). In the fabrication process of fine pattern silicon devices, the deposition temperature of As-doped poly-Si has been selected in the range between 650 ~ and 800~ taking account of grain size (4-6). The deposition rate, structure, and resistivity of As-doped poly-Si have been investigated by many workers (5-7), however, little has been known about As doping mechanism of chemical vapor deposited poly-Si at deposition temperature between 650 ~ and 800~ which is a basic knowledge for using As-doped poly-Si.In the present work, the As concentration (CAs) in poly-Si deposited under various deposition conditions in the deposition temperature range 670~176 using the SiH4-H2-AsH~ gas system was obtained by neutron activation analysis. From the experimental results, it was suggested that, for lower PAsH3 (i) region, CAs is limited by the diffusion of As-containing species in the stagnant layer (8) formed by gas stream, and for higher PAsHa(i) region, CAs is controlled by the surface reaction, and that monatomic As existed at wafer surKey words: CVD, doping, semiconductor, bonding.face is incorporated in poly-Si in accordance with Henry's law. The temperature dependences of the transfer coefficient of As atoms in H2 and the segregation coefficient of monatomic As between gas phase and poly-Si were also obtained, and the energy of As-Si bond was determined using Weiser's model (9). ExperimentalThe As-doped poly-Si was deposited in an rf heated reactor usi...

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“…Until recently, these films have been generally deposited in atmosphericpressure, cold-wall reactors, in which the silicon substrates lie fiat on an externally heated susceptor. The electrical properties of such films have been reported by many researchers (4)(5)(6)(7)(8).…”

Section: Hewlett-packard Laboratories Palo Alto Calilornia 94304mentioning

confidence: 99%