Growth and characterization of p-Cu2O/n-ZnO nanorod heterojunctions prepared by a two-step potentiostatic method

Jeong, Yoon Suk; Kim, Hyung-Hoon; Lee, Ho Seong

doi:10.1016/j.jallcom.2013.04.039

Cited by 17 publications

(8 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the band structure of Cu 2 O, it has been reported that the most significant defect levels were one acceptor level at 0.3 eV and a deep donor level at 0.9 eV from the VB edge . Due to their high solar spectral absorption coefficient, special energy‐band configuration, abundance, and nontoxicity, copper oxides have been used in photovoltaic devices, gas sensors, high‐ T c superconductors, memory devices, and lithium‐ion batteries . Due to the high Hall mobility of Cu 2 O, the applications in TFTs were also extensively studied after Matsuzaki and co‐workers successfully demonstrated the first high‐field‐effect‐mobility Cu 2 O p‐type TFT by pulsed laser deposition (PLD) …”

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

See 1 more Smart Citation

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

View full text Add to dashboard Cite

The development of transparent p-type oxide semiconductors with good performance could be a true enabler for a variety of applications, where transparency, power efficiency and more circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, we review recent developments in materials and devices based on p-type oxide semiconductors, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides and nickel oxides. The crystal and electronic structures of these materials are reviewed, along with approaches to enhance valence band dispersion to reduce effective mass and increase mobility.Strategies to reduce the interfacial defects, off state current, and material instability are discussed. Furthermore, we show that promising progress has been made in the performance of various type of devices based on p-type oxides. For example, transparent oxide-based p-n junction diodes have experienced significantly improved performance, where rectification ratios >10 7 have been achieved. The performances of thin-film transistors and inverters have also been modestly improved. For example, thin-film transistors with field-effect mobilities exceeding 5 cm 2 V -1 s -1 have been reported. In addition, several innovative approaches were developed to fabricate transparent complementary metal oxide semiconductor (CMOS) 2 devices. These approaches include novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains (as high as 120 has been demonstrated).Some progress has also been made in reducing the interfacial defects and off state currents using capping layers, high quality dielectrics and surface treatments. Resistive memory devices and hole transport layer in optoelectronic devices, mostly based on nickel oxide, have made decent progress. Transparent ferroelectric memory devices comprising p-type oxides have also been reported recently showing good hole mobilities (~3.3 cm 2 V -1 s -1 ) and good retention characteristics. This even includes multistate memory devices that show good stability. Nanoscale (e.g. nanowire) devices have now been reported using p-type oxides and do show performance improvements at scaled device geometry. New process developments have been reported, and some p-type oxides can now be deposited using atomic layer deposition and chemical routes, with promising performances. However, despite these recent developments, p-type oxides still lag in performance behind the n-type counterparts, which have entered volume production in the display market. The recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented in this review.

show abstract

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

“…Binary copper oxides have also been evaluated in p–n‐junction devices, especially for rectifying and photovoltaic (PV) applications . The interest in CuO for PV applications is mainly due to its nearly ideal bandgap of 1.4 eV, which theoretically can give a solar conversion efficiency of 33% …”

Section: Performance Of Oxide‐based P–n Junctionsmentioning

confidence: 99%

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

View full text Add to dashboard Cite

show abstract

“…However, the construction of p-Cu 2 O/n-ZnO heterojunctions employing two electrodes ECD is few reported. For instance, Jeong et al [16] reported the potentiostatic electrodeposition of Cu 2 O on ZnO with two electrodes, but the performance of the product as a solar cell material was not evaluated. In addition, the performance of the solar cell constructed above is not very ideal.…”

Section: Introductionmentioning

confidence: 99%

An electrochemical constructed p-Cu2O/n-ZnO heterojunction for solar cell

Chen

Lin

Liu

et al. 2015

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…In step 1, the seed layer was prepared according to current density of 0.1 mA cm −2 in order to make the bonding ability between Cu 2 O seeds and ZnO nanorods. After that, the thickness of Cu 2 O was grown by step 2 and the sample thickness could be adjusted by the change of deposition time (Jeong et al 2013 ). The silver paste was used as a back contact of the p-Cu 2 O/i-ZnO nanorods/n-IGZO heterojunction.…”

Section: Methodsmentioning

confidence: 99%

Changing the thickness of two layers: i-ZnO nanorods, p-Cu2O and its influence on the carriers transport mechanism of the p-Cu2O/i-ZnO nanorods/n-IGZO heterojunction

Trinh

Phung

et al. 2016

SpringerPlus

View full text Add to dashboard Cite

In this study, two layers: i-ZnO nanorods and p-Cu2O were fabricated by electrochemical deposition. The fabricating process was the initial formation of ZnO nanorods layer on the n-IGZO thin film which was prepared by sputtering method, then a p-Cu2O layer was deposited on top of rods to form the p-Cu2O/i-ZnO nanorods/n-ZnO heterojunction. The XRD, SEM, UV–VIS, I–V characteristics methods were used to define structure, optical and electrical properties of these heterojunction layers. The fabricating conditions and thickness of the Cu2O layers significantly affected to the formation, microstructure, electrical and optical properties of the junction. The length of i-ZnO nanorods layer in the structure of the heterojunction has strongly affected to the carriers transport mechanism and performance of this heterojunction.

show abstract

Growth and characterization of p-Cu2O/n-ZnO nanorod heterojunctions prepared by a two-step potentiostatic method

Cited by 17 publications

References 28 publications

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

An electrochemical constructed p-Cu2O/n-ZnO heterojunction for solar cell

Changing the thickness of two layers: i-ZnO nanorods, p-Cu2O and its influence on the carriers transport mechanism of the p-Cu2O/i-ZnO nanorods/n-IGZO heterojunction

Contact Info

Product

Resources

About