Growth and characterization of nitrogen-doped C-face 4H-SiC epilayers

Chen, Wenzhou; Lee, Kung‐Yen; Capano, Michael A.

doi:10.1016/j.jcrysgro.2006.09.033

Cited by 14 publications

(16 citation statements)

References 18 publications

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“…When defects are present, breakdown of a device is often accelerated. Recent published results examining how SiC Schottky Barrier diodes (SBD) are influenced by defects have demonstrated that forward and reverse characteristics are sensitive to essentially any defect within the active region of the device [1][2][3][4]. Defects that are known to degrade diode characteristics include micropipes, comets, carrots, inclusions, small-angle boundaries, and screw dislocations.…”

Section: Introductionmentioning

confidence: 99%

Carbon Nanotube Array Thermal Interfaces for High-Temperature Silicon Carbide Devices

Cola

Fisher

et al. 2008

Nanoscale and Microscale Thermophysical Engineering

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Follow this and additional works at: http://docs.lib.purdue.edu/nanopub This document has been made available through Purdue e-Pubs, a service of the Purdue University Libraries. Please contact epubs@purdue.edu for additional information.Cola, Baratunde A.; Xu, Xianfan; Fisher, Timothy; Capano, Michael A.; and Amama, Placidus B., "Carbon nanotube array thermal interfaces for high-temperature silicon carbide devices" (2008 Full terms and conditions of use: http://www.informaworld.com/terms-and-conditions-of-access.pdf This article may be used for research, teaching and private study purposes. Any substantial or systematic reproduction, re-distribution, re-selling, loan or sub-licensing, systematic supply or distribution in any form to anyone is expressly forbidden.The publisher does not give any warranty express or implied or make any representation that the contents will be complete or accurate or up to date. The accuracy of any instructions, formulae and drug doses should be independently verified with primary sources. The publisher shall not be liable for any loss, actions, claims, proceedings, demand or costs or damages whatsoever or howsoever caused arising directly or indirectly in connection with or arising out of the use of this material. , and the room-temperature thermal resistances of SiC-MWCNT-Ag interfaces at 69-345 kPa as well as the thermal resistances of SiC-MWCNT-Ag interfaces up to 250 C (at 69 kPa) have been measured using a photoacoustic technique. The SiC-MWCNT-Ag interfaces with MWCNTs grown on the C-face of SiC achieved thermal resistances less than 10 mm 2 K/W, which is lower than the resistances of MWCNT interfaces grown using the same catalysis and growth methods on the Si-face of SiC and Ti-coated SiC. The thermal resistances of the SiC-MWCNT-Ag interfaces exhibit weak temperature dependence in the measured range, indicating that the interfaces are suitable for high-temperature power electronics applications. CARBON NANOTUBE ARRAY THERMAL INTERFACES FOR HIGH-TEMPERATURE SILICON CARBIDE DEVICES

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Section: Introductionmentioning

confidence: 99%

Carbon Nanotube Array Thermal Interfaces for High-Temperature Silicon Carbide Devices

Cola

Fisher

et al. 2008

Nanoscale and Microscale Thermophysical Engineering

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“…Another kind of defect (see Fig. 1c) that looks like a pyramid-shaped pit and has been referred to as an IP in literature [10] was also found along with regular TDs. Note that the formation of IPs on the silicon face of 4H-SiC is in contradiction with recent work [10], where it was claimed that such IPs form only on C face epilayers.…”

Section: Resultsmentioning

confidence: 73%

Study of triangular defects and inverted pyramids in 4H-SiC 4° off-cut (0001) Si face epilayers

Shrivastava

Muzykov

Caldwell

et al. 2008

Journal of Crystal Growth

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“…• o-cut substrates with the use of so called hot wall growth reactor had been recently described by Wada et al [5] and by Chen and Capano [6].…”

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“…• with dierent growth rate, which was one of the parameters suggested by many authors as the one to be altered at the lower o-cut [5,6]. Various values of the growth rate parameter were used, as suggested for the small o-cut case in refs.…”

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Topographic and Reflectometric Investigation of Crystallographic Defects and Surface Roughness in 4H Silicon Carbide Homoepitaxial Layers Deposited at Various Growth Rates

et al. 2012

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Undoped 4H silicon carbide epitaxial layers were deposited by means of CVD method with growth rates of 2 µm/h, 5 µm/h and 11 µm/h at 1540• and 0• o-cut 4H-SiC (00 · 1) substrates. The structural defects were studied before and after growth of the epitaxial layers by means of conventional Lang topography, synchrotron white beam and monochromatic beam topography and by means of X-ray specular reectometry. The topographic investigations conrmed the continuation of the dislocations in the epitaxial deposit on the 8• and 4• o-cut substrates without new extended defects. The important dierence occurred in the surface roughness of the epitaxial layers, which increased for higher growth rates. The epitaxial layers grown on 0• o-cut substrates at analogous condition contained usually other SiC polytypes, but the inuence of the growth rate on the distribution of the polytypes was observed.

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Growth and characterization of nitrogen-doped C-face 4H-SiC epilayers

Cited by 14 publications

References 18 publications

Carbon Nanotube Array Thermal Interfaces for High-Temperature Silicon Carbide Devices

Carbon Nanotube Array Thermal Interfaces for High-Temperature Silicon Carbide Devices

Study of triangular defects and inverted pyramids in 4H-SiC 4° off-cut (0001) Si face epilayers

Topographic and Reflectometric Investigation of Crystallographic Defects and Surface Roughness in 4H Silicon Carbide Homoepitaxial Layers Deposited at Various Growth Rates

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