Study of triangular defects and inverted pyramids in 4H-SiC 4° off-cut (0001) Si face epilayers

Shrivastava, A.; Muzykov, Peter G.; Caldwell, Joshua D.; Sudarshan, Tangali S.

doi:10.1016/j.jcrysgro.2008.07.102

Cited by 28 publications

(25 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Conflicting evidences were reported about the origin and the structure of the TDs. 3C polytype inclusions were often observed in TDs [7,8]. Micro-Raman analysis was used to establish the presence of 3C-SiC in certain triangular defects [8].…”

Section: Introductionmentioning

confidence: 99%

“…3C polytype inclusions were often observed in TDs [7,8]. Micro-Raman analysis was used to establish the presence of 3C-SiC in certain triangular defects [8]. However, other studies using micro-Raman analysis indicated that some types of TDs did not contain 3C-SiC [9].…”

Section: Introductionmentioning

confidence: 99%

“…Screw dislocations at the vertex of the triangle were sometimes observed [8]. It was proposed that the nucleation of the TDs is due to a screw dislocation in the substrate dissociating into partial dislocations at the substrate-epitaxial interface and continuing into the epitaxial layer [16].…”

Section: Introductionmentioning

confidence: 99%

“…At high C/Si ratios the surface mobility decreases due to supersaturation of adsorbed atoms, which favors 2D nucleation and formation of TDs [9,[23][24][25][26]. Lower temperatures were also found to promote TD formation [8,9,23,25]. Other factors such as deteriorated susceptors and higher temperature ramp rates also favor TDs [8].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Triangular defects in the low-temperature halo-carbon homoepitaxial growth of 4H-SiC

Das

Melnychuk

Koshka

2010

Journal of Crystal Growth

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Triangular defects in the low-temperature halo-carbon homoepitaxial growth of 4H-SiC

Das

Melnychuk

Koshka

2010

Journal of Crystal Growth

View full text Add to dashboard Cite

“…7 Morphological defects, specifically the triangular defects and inverted pyramids, are prone to be generated in epigrowth on low off-axis angle substrates. 8 Hence, determination of optimized growth conditions to produce SiC epilayers of low defect density with good surface morphology requires a systematic study when evaluating a new precursor system.…”

mentioning

confidence: 99%

Study of Surface Morphology, Impurity Incorporation and Defect Generation during Homoepitaxial Growth of 4H-SiC Using Dichlorosilane

Song

Chandrashekhar

Sudarshan

2014

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The growth of 4 • off-axis 4H-SiC epilayers by chemical vapor deposition is studied using dichlorosilane as the Si precursor in a chimney reactor. The unintentional and intentional nitrogen doping at various C/Si ratios and N 2 flow rates are investigated. The C/Si ratio has a significant influence on the growth rate, surface morphology, conversion of basal plane dislocations (BPDs), and generation of other defects (e.g., in-growth stacking faults and morphological defects). Addition of N 2 has no obvious influence on growth rate and BPD conversion. It is preferable to grow high quality n + epilayers at a C/Si ratio in the range of 1.3-1.8 along with the addition of a suitable amount of N 2 in consideration of high growth rate, good surface morphology, and low defect density. In this case, the conversion ratio of BPDs to threading edge dislocations is greater than 99.8% regardless of N 2 addition. Therefore >99.8% substrate BPDs can be buried in an n + buffer layer, which is beneficial to SiC bipolar power devices. No special treatment prior to, during or after the epigrowth is necessary. The epilayers with doping concentration all the way from p − (∼1e15 cm −3 ) to semi-insulating, then to n + (∼1e18 cm −3 ), can be achieved, giving a great range of flexibility in growth using dichlorosilane precursor. Further optimization of in-situ etching and growth conditions to eliminate step bunching has also been suggested. 4H-silicon carbide (4H-SiC) is a promising wide bandgap material for high power electronic devices, owing to its unique thermal and electrical properties such as high breakdown field, high thermal conductivity, and high electron saturation velocity.1,2 Chemical vapor deposition (CVD) is a well-developed technique adopted in semiconductor industry to produce high purity and high quality thin films.3 Homoepitaxial growth of SiC via the CVD technique is one of the key steps in the fabrication of high performance SiC devices. Currently, chloride-based CVD has attracted much interest to potentially replace the traditional silane based CVD for SiC epitaxial growth to reduce the Si droplet formation at high growth rates, because of the higher bonding energy of Si-Cl (400 kJ/mol) than SiSi (226 kJ/mol).4 Dichlorosilane (SiH 2 Cl 2 , DCS) is a gas (boiling point: 8.2• C) at room temperature. It has been demonstrated that using DCS and propane (C 3 H 8 ) as the precursors, high crystalline quality 8• off-axis SiC epilayers were achieved at a high growth rate (up to 100 μm/h). 5,6 At present, the standard off-axis angle of commercially available SiC substrates is lowered to 4• to reduce the material loss during substrate preparation from the crystal boules.Step-bunching is a typical surface feature of the epilayers grown on 4• off-axis substrates, resulting in increase in surface roughness. 7Morphological defects, specifically the triangular defects and inverted pyramids, are prone to be generated in epigrowth on low off-axis angle substrates. 8 Hence, determination of optimized growth conditions to produce SiC ...

show abstract

Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition

Masumoto

Kudou

Tamura

et al. 2013

Journal of Crystal Growth

View full text Add to dashboard Cite

Study of triangular defects and inverted pyramids in 4H-SiC 4° off-cut (0001) Si face epilayers

Cited by 28 publications

References 19 publications

Triangular defects in the low-temperature halo-carbon homoepitaxial growth of 4H-SiC

Triangular defects in the low-temperature halo-carbon homoepitaxial growth of 4H-SiC

Study of Surface Morphology, Impurity Incorporation and Defect Generation during Homoepitaxial Growth of 4H-SiC Using Dichlorosilane

Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition

Contact Info

Product

Resources

About