Growth and characterization of N-polar InGaN∕GaN multiquantum wells

Keller, S.; Fichtenbaum, N.; Furukawa, M.; Speck, James S.; DenBaars, Steven P.; Mishra, Umesh K.

doi:10.1063/1.2738381

Cited by 123 publications

(95 citation statements)

References 20 publications

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“…The inferior behavior of N-face devices may be caused by a higher incorporation of impurities [46]. We guess that the higher incorporation is also valid for indium atoms, similar to the findings of Keller et al [47], who found a higher In concentration for the ð0001Þ plane in comparison to the (0001) plane.…”

Section: F1101g Vs F1122gsupporting

confidence: 60%

Three‐dimensional GaN for semipolar light emitters

Wunderer

Feneberg

Lipski

et al. 2010

Physica Status Solidi (b)

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Selective-area epitaxy is used to form three-dimensional (3D) GaN structures providing semipolar crystal facets. On full 2-in. sapphire wafers we demonstrate the realization of excellent semipolar material quality by introducing inverse GaN pyramids. When depositing InGaN quantum wells on such a surface, the specific geometry influences thickness and composition of the films and can be nicely modeled by gas phase diffusion processes. Various investigation methods are used to confirm the drastically reduced piezoelectric polarization on the semipolar planes. Complete electrically driven light-emitting diode test structures emitting in the blue and blue/green spectral regions show reasonable output powers in the milliwatt regime. Finally, first results of the integration of the 3D structures into a conventional laser design are presented

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Section: F1101g Vs F1122gsupporting

confidence: 60%

Three‐dimensional GaN for semipolar light emitters

Wunderer

Feneberg

Lipski

et al. 2010

Physica Status Solidi (b)

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“…The poor luminous efficiency of N-polar In x Ga 1−x N QWs does not seem to be a specific problem of PA-MBE, but has also been reported for Npolar In x Ga 1−x N/In y Ga 1−y N QWs grown by metal organic chemical vapor deposition (MOCVD). 3,14,15 Also for the case of MOCVD, this phenomenon is not understood yet, but has been tentatively attributed to higher dislocation densities 14 as well as to elevated residual impurity concentrations. 3,14 In this work, we investigate the luminescence of Gaand N-polar In x Ga 1−x N/In y Ga 1−y N QWs to find a consistent explanation for the differences in their efficiencies.…”

Section: Introductionmentioning

confidence: 99%

“…3,14,15 Also for the case of MOCVD, this phenomenon is not understood yet, but has been tentatively attributed to higher dislocation densities 14 as well as to elevated residual impurity concentrations. 3,14 In this work, we investigate the luminescence of Gaand N-polar In x Ga 1−x N/In y Ga 1−y N QWs to find a consistent explanation for the differences in their efficiencies. Carrier escape and surface recombination is ruled out by combining simulations of the band profiles with PL measurements carried out with resonant excitation.…”

Section: Introductionmentioning

confidence: 99%

Comparison of the Luminous Efficiencies of Ga- and N-PolarInxGa1−xN/In
Fernández-Garrido
¹
,
Lähnemann
²
,
Hauswald
³

et al. 2016
Phys. Rev. Applied
17
1
14
0
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We investigate the luminescence of Ga-and N-polar In x Ga 1−x N/In y Ga 1−y N quantum wells grown by plasma-assisted molecular beam epitaxy on freestanding GaN as well as 6H-SiC substrates. In striking contrast to their Ga-polar counterparts, the N-polar quantum wells prepared on freestanding GaN do not exhibit any detectable photoluminescence even at 10 K. Theoretical simulations of the band profiles combined with resonant excitation of the quantum wells allow us to rule out carrier escape and subsequent surface recombination as the reason for this absence of luminescence. To explore the hypothesis of a high concentration of nonradiative defects at the interfaces between wells and barriers, we analyze the photoluminescence of Ga-and N-polar quantum wells prepared on 6H-SiC as a function of the well width. Intense luminescence is observed for both Ga-and N polar samples. As expected, the luminescence of the Ga-polar quantum wells quenches and red-shifts with increasing well width due to the quantum confined Stark effect. In contrast, both the intensity and the energy of the luminescence from the N-polar samples are essentially independent of well width. Transmission electron microscopy reveals that the N-polar quantum wells exhibit abrupt interfaces and homogeneous composition, excluding emission from In-rich clusters as the reason for this anomalous behavior. The microscopic origin of the luminescence in the N-polar samples is elucidated using spatially resolved cathodoluminescence spectroscopy. Regardless of well width, the luminescence is found to not originate from the N-polar quantum wells, but from the semipolar facets of ∨-pit defects. These results cast serious doubts on the potential of N-polar In x Ga 1−x N/In y Ga 1−y N quantum wells grown by plasma-assisted molecular beam epitaxy for the development of long-wavelength light emitting diodes. What remains to be seen is whether unconventional growth conditions may enable a significant reduction in the concentration of nonradiative defects.

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“…4(b). The incorporation of In inside the pit must depend on several factors such as surface planes, 15 strain, 16 and the off-angle of the facet plane. 17 The surface FIG.…”

Section: All Article Content Except Where Otherwise Noted Is Licensmentioning

confidence: 99%

Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates

et al. 2017

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We studied the emissive pits in InGaN films grown on compressive and strain-free GaN underlying layers. Pit density decreased with the full width at half maximum of ω(0002) of InGaN. The films grew on compressive and strain-free GaN underlying layers with spiral and step-flow modes, respectively. Carbon impurities accumulated inside the pits. Comparison of cathodoluminescence inside the pits and steady-state photocapacitance spectra showed that the energy level of the carbon impurities appeared at ∼2.8 eV below the conduction band (Ec) for both types of pits. Deep-level defects at Ec −2.4 eV resulting in green fluorescence emission were considered to originate from pits related to screw dislocations.

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Growth and characterization of N-polar InGaN∕GaN multiquantum wells

Cited by 123 publications

References 20 publications

Three‐dimensional GaN for semipolar light emitters

Three‐dimensional GaN for semipolar light emitters

Comparison of the Luminous Efficiencies of Ga- and N-PolarInxGa1−xN/In
Fernández-Garrido
¹
,
Lähnemann
²
,
Hauswald
³

et al. 2016
Phys. Rev. Applied
17
1
14
0
View full text Add to dashboard Cite

Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates

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Growth and characterization of N-polar InGaN∕GaN multiquantum wells

Cited by 123 publications

References 20 publications

Three‐dimensional GaN for semipolar light emitters

Three‐dimensional GaN for semipolar light emitters

Comparison of the Luminous Efficiencies of Ga- and N-PolarInxGa1−xN/InFernández-Garrido1, Lähnemann2, Hauswald3 et al. 2016Phys. Rev. Applied171140View full textAdd to dashboardCite

Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates

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Comparison of the Luminous Efficiencies of Ga- and N-PolarInxGa1−xN/In
Fernández-Garrido
¹
,
Lähnemann
²
,
Hauswald
³

et al. 2016
Phys. Rev. Applied
17
1
14
0
View full text Add to dashboard Cite