Growth and characterization of copper nanoclusters embedded in SiC matrix

Shin, Dongwoon; Wang, Shan X.; Marshall, A. F.; Kimura, Wataru; Dong, Chung‐Li; Augustsson, Andreas; Guo, Jinghua

doi:10.1016/j.tsf.2004.07.079

Cited by 10 publications

(10 citation statements)

References 15 publications

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“…The narrow doublet peaks with 2p 3/2 at 99.6 eV can be assigned to silicide. 42,43 The two sets of doublets at higher binding energies 101. A full reaction time investigation was undertaken to assess its impact over NW morphology as shown in Figure 3.…”

Section: Resultsmentioning

confidence: 99%

Growth of Crystalline Copper Silicide Nanowires in High Yield within a High Boiling Point Solvent System

Geaney¹,

Dickinson²,

O’Dwyer

et al. 2012

Chem. Mater.

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Section: Resultsmentioning

confidence: 99%

Growth of Crystalline Copper Silicide Nanowires in High Yield within a High Boiling Point Solvent System

Geaney¹,

Dickinson²,

O’Dwyer

et al. 2012

Chem. Mater.

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“…Although there are some studies on copper island formation on silicon carbide, the reports relied on the indirect spectroscopic results mainly focusing in the stability of Cu/SiC interfaces [30][31][32] . Recently we have observed the morphology of the copper nanoclusters by high-resolution transmission electron microscopy (TEM) where copper nanoclusters had ellipsoid shape inside SiC matrix 33 . XAS studies can give a detailed description of the size dependence of the electronic structure of the copper nanoclusters to understand the nature of chemical bonds due to size effect.…”

Section: Cu Nanoclustersmentioning

confidence: 99%

Soft x-ray spectroscopy study of nanoscale materials

Guo

2005

Physical Chemistry of Interfaces and Nanomaterials IV

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The ability to control the particle size and morphology of nanoparticles is of crucial importance nowadays both from a fundamental and industrial point of view considering the tremendous amount of high-tech applications. Controlling the crystallographic structure and the arrangement of atoms along the surface of nanostructured material will determine most of its physical properties. In general, electronic structure ultimately determines the properties of matter. Soft X-ray spectroscopy has some basic features that are important to consider. X-ray is originating from an electronic transition between a localized core state and a valence state. As a core state is involved, elemental selectivity is obtained because the core levels of different elements are well separated in energy, meaning that the involvement of the inner level makes this probe localized to one specific atomic site around which the electronic structure is reflected as a partial density-ofstates contribution. The participation of valence electrons gives the method chemical state sensitivity and further, the dipole nature of the transitions gives particular symmetry information. The new generation synchrotron radiation sources producing intensive tunable monochromatized soft X-ray beams have opened up new possibilities for soft X-ray spectroscopy. The introduction of selectively excited soft X-ray emission has opened a new field of study by disclosing many new possibilities of soft X-ray resonant inelastic scattering. In this paper, some recent findings regarding soft Xray absorption and emission studies of various nanostructured systems are presented.

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“…Thus, the intermixing is not energetically favorable in such conditions. 79 Copper-rich silicides (Cu 4 Si, Cu 3 Si) can be formed by the reaction between copper layers and silicon substrates covered by a thin silicon oxide layer of 2−4 nm during heat treatment in the temperature range of 600−750 °C. 11,38 The enthalpy of formation of the most stable Cu silicide (Cu 3 Si) has been calculated to be −24.4 kJ/mol 79 at RT.…”

Section: Resultsmentioning

confidence: 99%

“…The enthalpy of mixing of Cu and Si is almost the same at RT because of the similarity in their crystal structure. Thus, the intermixing is not energetically favorable in such conditions . Copper-rich silicides (Cu 4 Si, Cu 3 Si) can be formed by the reaction between copper layers and silicon substrates covered by a thin silicon oxide layer of 2–4 nm during heat treatment in the temperature range of 600–750 °C …”

Section: Resultsmentioning

confidence: 99%

“…Copper-rich silicides (Cu 4 Si, Cu 3 Si) can be formed by the reaction between copper layers and silicon substrates covered by a thin silicon oxide layer of 2–4 nm during heat treatment in the temperature range of 600–750 °C The enthalpy of formation of the most stable Cu silicide (Cu 3 Si) has been calculated to be −24.4 kJ/mol at RT. The catalytic action of Cu silicide further helps in breaking Si–Si and Si–O bonds (which would otherwise occur at higher temperature), thereby enhancing the formation of voids and more silicide formation.…”

Section: Resultsmentioning

confidence: 99%

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Intermediate Cu-O-Si Phase in the Cu-SiO₂/Si(111) System: Growth, Elemental, and Electrical Studies

et al. 2021

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We investigate here the strain-induced growth of Cu at 600 °C and its interactions with a thermally grown, 270 nm-thick SiO2 layer on the Si(111) substrate. Our results show clear evidence of triangular voids and formation of triangular islands on the surface via a void-filling mechanism upon Cu deposition, even on a 270 nm-thick dielectric. Different coordination states, oxidation numbers, and chemical compositions of the Cu-grown film are estimated from the core level X-ray photoelectron spectroscopy (XPS) measurements. We find evidence of different compound phases including an intermediate mixed-state of Cu–O–Si at the interface. Emergence of a mixed Cu–O–Si intermediate state is attributed to the new chemical states of Cu x+, O x , and Si x+ observed in the high-resolution XPS spectra. This intermediate state, which is supposed to be highly catalytic, is found in the sample with a concentration as high as ∼41%. Within the Cu–O–Si phase, the atomic percentages of Cu, O, and Si are ∼1, ∼86, and ∼13%, respectively. The electrical measurements carried out on the sample reveal different resistive channels across the film and an overall n-type semiconducting nature with a sheet resistance of the order of 106 Ω.

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Growth and characterization of copper nanoclusters embedded in SiC matrix

Cited by 10 publications

References 15 publications

Growth of Crystalline Copper Silicide Nanowires in High Yield within a High Boiling Point Solvent System

Growth of Crystalline Copper Silicide Nanowires in High Yield within a High Boiling Point Solvent System

Soft x-ray spectroscopy study of nanoscale materials

Intermediate Cu-O-Si Phase in the Cu-SiO₂/Si(111) System: Growth, Elemental, and Electrical Studies

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Growth and characterization of copper nanoclusters embedded in SiC matrix

Cited by 10 publications

References 15 publications

Growth of Crystalline Copper Silicide Nanowires in High Yield within a High Boiling Point Solvent System

Growth of Crystalline Copper Silicide Nanowires in High Yield within a High Boiling Point Solvent System

Soft x-ray spectroscopy study of nanoscale materials

Intermediate Cu-O-Si Phase in the Cu-SiO2/Si(111) System: Growth, Elemental, and Electrical Studies

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Intermediate Cu-O-Si Phase in the Cu-SiO₂/Si(111) System: Growth, Elemental, and Electrical Studies