Research on carbon materials-based thin films with low light reflectance has received paramount importance in order to have high absorber coatings for stray light control applications. We report here a...
We investigate here
the strain-induced growth of Cu at 600 °C
and its interactions with a thermally grown, 270 nm-thick SiO2 layer on the Si(111) substrate. Our results show clear evidence
of triangular voids and formation of triangular islands on the surface
via a void-filling mechanism upon Cu deposition, even on a 270 nm-thick
dielectric. Different coordination states, oxidation numbers, and
chemical compositions of the Cu-grown film are estimated from the
core level X-ray photoelectron spectroscopy (XPS) measurements. We
find evidence of different compound phases including an intermediate
mixed-state of Cu–O–Si at the interface. Emergence of
a mixed Cu–O–Si intermediate state is attributed to
the new chemical states of Cu
x+, O
x
, and Si
x+ observed
in the high-resolution XPS spectra. This intermediate state, which
is supposed to be highly catalytic, is found in the sample with a
concentration as high as ∼41%. Within the Cu–O–Si
phase, the atomic percentages of Cu, O, and Si are ∼1, ∼86,
and ∼13%, respectively. The electrical measurements carried
out on the sample reveal different resistive channels across the film
and an overall n-type semiconducting nature with a sheet resistance
of the order of 106 Ω.
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