Growth and Characterization of 3C-SiC Films for Micro Electro Mechanical Systems (MEMS) Applications

Abstract

The growth of 3C-SiC on (001) silicon substrates by means of vapor phase epitaxy is described. The growth mechanisms are discussed with the aid of structural and morphological characterizations performed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. Raman spectroscopy was used to study the residual stress. A large shift of Raman peaks with respect to the expected values for the bulk is observed and explained by the relaxation of Raman selection rules due to lattice defects. The stress and stress gradients through the film thickness are observed and studied on micrometer-sized structures such as membranes and cantilevers. Local Raman peak fluctuations are observed on millimeter-sized membranes, while cantilevers show different degrees of curling depending on film thickness.

Cubic SiC Nanowires: Growth, Characterization and Applications

“…This temperature was then held for 5 minutes to complete the carburisation process and form a thin monocrystalline SiC layer on the Si substrate. After the carburisation process the propane flow is interrupted, the temperature is raised to 1200 °C and SiH 4 and C 3 H 8 are injected in the growth chamber for 10 minutes (Bosi et al, 2009).…”

Assessing Biaxial Stress and Strain in 3C-SiC/Si (001) by Raman Scattering Spectroscopy

“…Silicon carbide (SiC) is one of the very few IV-IV compound semiconductors -exhibiting exceptional mechanical, electrical and chemical properties [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. The novel characteristics of SiC have made it suitable for fabrication of many important modern [1][2][3][4][5][6][7][8][9][10] devices for microelectronic, optoelectronic and sensor application needs.…”

“…The novel characteristics of SiC have made it suitable for fabrication of many important modern [1][2][3][4][5][6][7][8][9][10] devices for microelectronic, optoelectronic and sensor application needs. The scientific interest in SiC is stimulated by a strong chemical bond between Si and C atoms which provides the material a wider-bandgap, extreme hardness, high thermal stability, chemical inertness, higher thermal conductivity, high melting temperature, large bulk modulus, high critical (breakdown) electric field strength, and low dielectric constant.…”

“…SiC has also been considered as a substitute for Si to make Schottky diodes and metal-oxide-semiconductor fieldeffect transistors (MOSFETs) for high-power, high-temperature, and high-frequency applications. Both crystalline and polycrystalline SiC have become attractive in recent years to design micro-and nanoelectro-mechanical systems (MEMS, NEMS) [1][2][3][4][5][6][7][8][9][10]. While silicon carbide is currently being used to fabricate green, blue and ultraviolet light-emitting diodes (LEDs) -the emerging market [22,23] of utilizing heteroepitaxy/homoepitaxy SiC films is in high-power switches and microwave devices.…”

CBr4 as precursor for VPE growth of cubic silicon carbide

“…This carburisation was optimized for the 3C-SiC growth using the standard SiH 4 and C 3 H 8 precursors. By this procedure we were able to deposit 3C-SiC layers at 1200 °C and to realize MEMS test structures such as membranes, cantilevers and beams [15].…”