Cubic SiC Nanowires: Growth, Characterization and Applications

Attolini, G.; Rossi, Francesca; Fabbri, Filippo; Bosi, Matteo; Salviati, G.; Watts, Bernard Enrico

doi:10.5772/39502

Cited by 9 publications

(10 citation statements)

References 56 publications

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“…The strength of these M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT 7 nanorods is a factor of two or more than earlier observations for SiC whiskers of micrometer diameter [48]. Hence they can be used in nanoelectronics, field emission devices, biomedical engineering, nanocomposites and applications in high temperature nanoscale devices [58][59][60][61][62].…”

Section: Introductionmentioning

confidence: 96%

See 1 more Smart Citation

Chemistry of one dimensional silicon carbide materials: Principle, production, application and future prospects

Prakash

Venugopalan

Tripathi

et al. 2015

Progress in Solid State Chemistry

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Section: Introductionmentioning

confidence: 96%

“…There are few literature surveys on SiCNWs [5,32,58,60]. In the present article, a consolidated effort has been made to present a comprehensive and up-to-date review of the various synthesis strategies of 1D SiC nanostructures focusing on the bulk synthesis issue and recent trends for application of such SiCNWs.…”

Section: Introductionmentioning

confidence: 99%

Chemistry of one dimensional silicon carbide materials: Principle, production, application and future prospects

Prakash

Venugopalan

Tripathi

et al. 2015

Progress in Solid State Chemistry

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“…Due to the polarity of the crystalline 3C-SiC, the phonon modes can propagate either in longitudinal or transverse direction within 3C-SiC. Compared with the as-grown 3C-SiC, 3C-SiC nanoparticles showed additional Raman modes between 300 and 700 cm –1 , due to the presence of the surface Si–O species (Figure a) . This result was confirmed by the X-ray photoelectron spectroscopy (XPS) measurement.…”

Section: Resultsmentioning

confidence: 55%

Highly Selective Photocatalytic CO₂ Reduction to CH₄ by Ball-Milled Cubic Silicon Carbide Nanoparticles under Visible-Light Irradiation

Sun

2021

ACS Appl. Mater. Interfaces

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The ultimate goal of photocatalytic CO2 reduction is to achieve high selectivity for a single product with high efficiency. One of the most significant challenges is that expensive catalysts prepared through complex processes are usually used. Herein, gram-scale cubic silicon carbide (3C-SiC) nanoparticles are prepared through a top-down ball-milling approach from low-priced 3C-SiC powders. This facile mechanical milling strategy ensures large-scale production of 3C-SiC nanoparticles with an amorphous silicon oxide (SiO x ) shell and simultaneously induces abundant surface states. The surface states are demonstrated to trap the photogenerated carriers, thus remarkably enhancing the charge separation, while the thin SiO x shell prevents 3C-SiC from corrosion under visible light. The unique electronic structure of 3C-SiC tackles the challenge associated with low selectivity of photocatalytic CO2 reduction to C1 compounds. In conjugation with efficient water oxidation, 3C-SiC nanoparticles can reduce CO2 into CH4 with selectivity over 90%.

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“…This showed a uniform concentration of reactive species throughout the CVI reaction time. 28 The final density of the SiC foam was ∼350 kg/m 3 .…”

Section: Resultsmentioning

confidence: 99%

“…The formation of long SiC nanowires is well reported for SiC foams prepared by CVI/CVD techniques or from pre-ceramic polymers. [27][28][29][30][31]42 Usually, the formation of SiC wires of micron and nanometer size by CVD technique involves the solid and vapor phases. 42 In the vapor-solid mechanism, the morphology of as-deposited SiC wires depends on the supersaturating degree of the gaseous reactants which in turn depends on the deposition temperature and the concentration of MethylTrichlorosilane (MTS) in the reaction medium.…”

Section: Resultsmentioning

confidence: 99%

In situ growth of SiC wires on CVI densification of SiC foam

Sreeja

Shyin

Suchithra

et al. 2023

Int J Applied Ceramic Tech

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Silicon carbide (SiC) foam prepared by polymer infiltration and pyrolysis (PIP) process was further densified with β‐SiC by chemical vapor infiltration (CVI) technique. Scanning electron microscopy and high‐resolution transmission electron microscopy images confirmed the presence of highly entangled and branched in situ grown SiC wires of uniform diameter (∼500 nm) over the struts of open‐cell SiC foam. A uniform rate increase in diameter from nanometer to micron range (∼11 μm) was observed with an increase in the CVI reaction period. X‐ray diffraction results showed the formation of highly crystalline β‐SiC structure along the <111> direction with stacking faults. The formation of SiC wires was explained by the vapor–liquid–solid mechanism and evenness of the surface and uniform growth rate of SiC confirmed the homogeneous concentration of gaseous species during CVI reaction. The compressive strength increased with relative density, with maximum values of 5.5 ± 1.26 MPa for ultimate SiC foam (ρ = 400 kg/m3) prepared by hybrid PIP/CVI technique. The thermo‐oxidative stability of the resultant foam was evaluated up to 1650°C under air and shows excellent thermal stability compared to SiC foam prepared by PIP route. The densified SiC foam can find potential applications in the field of hot gas filters, catalyst supports, microwave absorption properties, and heat insulation for high‐temperature applications.

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Cubic SiC Nanowires: Growth, Characterization and Applications

Cited by 9 publications

References 56 publications

Chemistry of one dimensional silicon carbide materials: Principle, production, application and future prospects

Chemistry of one dimensional silicon carbide materials: Principle, production, application and future prospects

Highly Selective Photocatalytic CO₂ Reduction to CH₄ by Ball-Milled Cubic Silicon Carbide Nanoparticles under Visible-Light Irradiation

In situ growth of SiC wires on CVI densification of SiC foam

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Cubic SiC Nanowires: Growth, Characterization and Applications

Cited by 9 publications

References 56 publications

Chemistry of one dimensional silicon carbide materials: Principle, production, application and future prospects

Chemistry of one dimensional silicon carbide materials: Principle, production, application and future prospects

Highly Selective Photocatalytic CO2 Reduction to CH4 by Ball-Milled Cubic Silicon Carbide Nanoparticles under Visible-Light Irradiation

In situ growth of SiC wires on CVI densification of SiC foam

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Highly Selective Photocatalytic CO₂ Reduction to CH₄ by Ball-Milled Cubic Silicon Carbide Nanoparticles under Visible-Light Irradiation