Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon

Li, Qiang; Ng, Kar Wei; Lau, Kei May

doi:10.1063/1.4913432

Cited by 142 publications

(113 citation statements)

References 10 publications

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“…Very recently, it has been demonstrated that GaAs nanoridge arrays grown by the ART technique on exactly oriented Si(001) substrate can be used after removal of the SiO 2 mask as a GaAs-on-Si compliant substrate for a coalescence growth step in order to obtain APB-free, low-defect GaAs layers with flat (001) surfaces [47]. In the SiO 2 mask trenches V-grooved {111} Figure 14.…”

Section: Growth On Surfaces Patterned With a Trench Maskmentioning

confidence: 99%

Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates

Riedl¹,

Lindner²

2017

Nanoscaled Films and Layers

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In the last decade, zinc blende structure III-V semiconductors have been increasingly utilized for the realization of high-performance optoelectronic applications because of their tunable bandgaps, high carrier mobility and the absence of piezoelectric fields. However, the integration of III-V devices on the Si platform commonly used for CMOS electronic circuits still poses a challenge, due to the large densities of mismatch-related defects in heteroepitaxial III-V layers grown on planar Si substrates. A promising method to obtain thin III-V layers of high crystalline quality is the growth on nanopatterned substrates. In this approach, defects can be effectively eliminated by elastic lattice relaxation in three dimensions or confined close to the substrate interface by using aspect-ratio trapping masks. As a result, an etch pit density as low as 3.3 × 10 5 cm −2 and a flat surface of submicron GaAs layers have been accomplished by growth onto a SiO 2 nanohole film patterned Si(001) substrate, where the threading defects are trapped at the SiO 2 mask sidewalls. An open issue that remains to be resolved is to gain a better understanding of the interplay between mask shape, growth conditions and formation of coalescence defects during mask overgrowth in order to achieve thin device quality III-V layers.

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Section: Growth On Surfaces Patterned With a Trench Maskmentioning

confidence: 99%

Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates

Riedl¹,

Lindner²

2017

Nanoscaled Films and Layers

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“…Relative to Si, non-nitride III-V materials have larger lattice constants and higher coefficients of thermal expansion (see Table II) which, for unoptimized growth conditions, result in high densities (∼10 9 cm 2 ) of crystalline defects including primarily threading dislocations (TDs) and antiphase domains. Fortunately, through careful optimization of growth conditions and utilization of dislocation filtering layers and techniques, [19][20][21][22] the defect density can be reduced by a few orders of magnitude enabling near native substrate level performance.…”

Section: Introductionmentioning

confidence: 99%

Perspective: The future of quantum dot photonic integrated circuits

et al. 2018

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Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS) foundries.

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“…We first grew a 1 lm coalesced GaAs layer on a V-groove-patterned Si (001) substrate by metalorganic chemical vapor deposition (MOCVD). 9,17,18 This was followed by the deposition of a 1 lm GaAs buffer, a 600 nm Al 0.7 Ga 0.3 As post region, and a 500 nm disk region in a molecular beam epitaxy (MBE) system. 19 The disk region encapsulates five layers of InAs/InGaAs dot-in-a-well (DWELL) structure.…”

mentioning

confidence: 99%

“…The active laser structures were grown on a GaAs-on-V-grooved-Si (GoVS) template 9 that is free of antiphase-domains and absorptive intermediate buffers. Compared to the quantum dot lasers recently demonstrated on offcut silicon using Ge buffers, [10][11][12][13][14] or direct nucleation of GaAs, 15,16 the use of on-axis (001) silicon offers better compatibility with conventional Si CMOS processes.…”

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confidence: 99%

Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

Wan

Liu

et al. 2016

Applied Physics Letters

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Subwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-μm wavelength range with low thresholds down to 35 μW at 10 K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towards dense integration of photonic components on the mainstream complementary metal–oxide–semiconductor platform.

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Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon

Cited by 142 publications

References 10 publications

Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates

Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates

Perspective: The future of quantum dot photonic integrated circuits

Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

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