Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

Wan, Yating; Li, Qiang; Liu, Alan Y.; Chow, Weng W.; Gossard, A. C.; Bowers, John E.; Hu, Evelyn L.; Lau, Kei May

doi:10.1063/1.4952600

Cited by 63 publications

(44 citation statements)

References 27 publications

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“…Second, the injection efficiency is reduced because the pump laser generated carriers can be partially trapped by the deep energy level traps related with dislocations in the disk region. 13 Moreover, the broader PL emission spectrum of the MDL on silicon is more favorable for multi-mode lasers (Fig. 1(f)).…”

mentioning

confidence: 99%

“…10 Recently, direct epitaxy of III-V lasers on Si has attracted significant attention with the successful use of self-assembled quantum dots (QDs) as active materials. [11][12][13] The distinctive zerodimensional density of states of QDs offers lower threshold current density with improved thermal stability in III-V lasers, 14 and their discrete localization promises greater immunity to defects associated with III-V/Si heteroepitaxy when compared to their conventional quantum-well counterparts. 15 More interestingly, these QDs are capable of bending or pinning the threading dislocations (TDs) because of their large strain field.…”

mentioning

confidence: 99%

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1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Shi

Zhu

et al. 2017

Applied Physics Letters

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Miniaturized laser sources can benefit a wide variety of applications ranging from on-chip optical communications and data processing, to biological sensing. There is a tremendous interest in integrating these lasers with rapidly advancing silicon photonics, aiming to provide the combined strength of the optoelectronic integrated circuits and existing large-volume, low-cost silicon-based manufacturing foundries. Using III-V quantum dots as the active medium has been proven to lower power consumption and improve device temperature stability. Here, we demonstrate room-temperature InAs/InAlGaAs quantum-dot subwavelength microdisk lasers epitaxially grown on (001) Si, with a lasing wavelength of 1563 nm, an ultralow-threshold of 2.73 μW, and lasing up to 60 °C under pulsed optical pumping. This result unambiguously offers a promising path towards large-scale integration of cost-effective and energy-efficient silicon-based long-wavelength lasers.

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confidence: 99%

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confidence: 99%

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Shi

Zhu

et al. 2017

Applied Physics Letters

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“…Although the growth on mask-free nanopatterned surfaces has been frequently used for site controlled fabrication of semiconductor QDs or nanoislands [55], it is also beneficial for improving the quality of continuous III-V layers [56][57][58][59]. Here, 'nanopatterned' means that the substrate surface exhibits ordered or random topographical features with dimensions well below 1 μm.…”

Section: Growth On Mask-free Nanopatterned Surfacesmentioning

confidence: 99%

“…Recently, these nanoheteroepitaxy methods have been exploited for the realization of several III-V devices integrated on a Si platform. Examples include laser diodes [59,61], GaAs solar cells [49], and GaAs/In x Ga 1−x As tunnel diodes for digital circuits applied e.g. in inverters or random-access memory cells [62,63].…”

Section: Relevance Of Nanoheteroepitaxial Layers For Advanced Optoelementioning

confidence: 99%

“…GaAs buffer layers on V-grooved exact-oriented Si(001) templates have been used to fabricate InAs/In x Ga 1−x As dot-in-a-well microdisc laser structures emitting at ∼1.2 μm wavelength with almost similar characteristics as devices fabricated on native GaAs substrate [59]. For the growth of the low-defect GaAs buffer layer a two-step deposition was used starting with selective growth in SiO 2 trenches followed by SiO 2 removal and the mask-free GaAs coalescence growth step by MOVPE, as described in Section 2.1.3.1.…”

Section: Qd Microdisc Laser Using Nanoheteroepitaxial Buffer On Si(001)mentioning

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Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates

Riedl¹,

Lindner²

2017

Nanoscaled Films and Layers

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In the last decade, zinc blende structure III-V semiconductors have been increasingly utilized for the realization of high-performance optoelectronic applications because of their tunable bandgaps, high carrier mobility and the absence of piezoelectric fields. However, the integration of III-V devices on the Si platform commonly used for CMOS electronic circuits still poses a challenge, due to the large densities of mismatch-related defects in heteroepitaxial III-V layers grown on planar Si substrates. A promising method to obtain thin III-V layers of high crystalline quality is the growth on nanopatterned substrates. In this approach, defects can be effectively eliminated by elastic lattice relaxation in three dimensions or confined close to the substrate interface by using aspect-ratio trapping masks. As a result, an etch pit density as low as 3.3 × 10 5 cm −2 and a flat surface of submicron GaAs layers have been accomplished by growth onto a SiO 2 nanohole film patterned Si(001) substrate, where the threading defects are trapped at the SiO 2 mask sidewalls. An open issue that remains to be resolved is to gain a better understanding of the interplay between mask shape, growth conditions and formation of coalescence defects during mask overgrowth in order to achieve thin device quality III-V layers.

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Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm

Wan

Zhang

Norman

et al. 2020

Laser & Photonics Reviews

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Wavelength tunable lasers are increasingly needed as key components for wavelength resource management technologies in future dense wavelength division multiplexing (DWDM) systems. While material systems with multiple quantum wells as an active region are widely used in long‐wavelength tunable lasers, the unique advantages of InAs/GaAs quantum dots (QDs) for low‐power operation, excellent thermal stability, and wide spectral bandwidth may open a new avenue in this field. Combining the advantages of QDs with a special designed half‐wave coupled cavity structure, directly modulated, single‐mode, tunable InAs/GaAs QD lasers are demonstrated at 1.3 µm wavelength range. The half‐wave coupler provides an active–active coupled‐cavity tunable structure without involving gratings or multiple epitaxial growths, producing synchronous power transfer in the two output waveguides and high single‐mode selectivity. 27‐channel wavelength switching is achieved with side‐mode‐suppression‐ratio of around 35 dB. Under continuous‐wave electrical injection, over 9 mW output power can be measured with 716 kHz Lorentzian linewidth, 4 GHz 3‐dB bandwidth, and 8 Gbit s−1 non‐return‐to‐zero signal modulation by directly probing the chip.

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Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

Cited by 63 publications

References 27 publications

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm

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